Patents by Inventor Ho-Soon Ko

Ho-Soon Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
    Patent number: 7939386
    Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
    Type: Grant
    Filed: March 23, 2009
    Date of Patent: May 10, 2011
    Assignee: Crosstek Capital, LLC
    Inventors: Jae-Young Rim, Ho-Soon Ko
  • IMAGE SENSOR APPLIED WITH DEVICE ISOLATION TECHNIQUE FOR REDUCING DARK SIGNALS AND FABRICATION METHOD THEREOF
    Publication number: 20090191662
    Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
    Type: Application
    Filed: March 23, 2009
    Publication date: July 30, 2009
    Inventors: Jae-Young RIM, Ho-Soon KO
  • Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
    Patent number: 7507614
    Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: March 24, 2009
    Assignee: Hynix Semiconductor, Inc.
    Inventors: Jae-Young Rim, Ho-Soon Ko
  • Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
    Publication number: 20070281437
    Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
    Type: Application
    Filed: August 8, 2007
    Publication date: December 6, 2007
    Inventors: Jae-Young Rim, Ho-Soon Ko
  • Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
    Publication number: 20050127462
    Abstract: The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
    Type: Application
    Filed: June 30, 2004
    Publication date: June 16, 2005
    Inventors: Jae-Young Rim, Ho-Soon Ko