Abstract: An embodiment multi-way coolant valve includes an outer housing including first to third outer inlets, first to third outer outlets, and a pump mount portion coupled to one of the outer outlets, an inner housing rotatably provided within the outer housing and including penetration holes corresponding to the outer inlets and outlets, a coolant line defined by a selective connection of the penetration holes such that the outer inlets and outlets are selectively connected, pads interposed between an interior circumference of the outer housing and an exterior circumference of the inner housing at locations of the outer inlets and outlets, respectively, and a driving device connected to a rotation center of the inner housing to selectively rotate the inner housing within the outer housing, wherein the inner housing is configured to rotate by a preset interval according to a selected vehicle mode.

Abstract: A photosensitive resin composition including a silsesquioxane-based copolymer obtained by copolymerizing a first monomer represented by Chemical Formula 1 (R1—R2—Si (R3)3), a second monomer represented by Chemical Formula 2 ((R4)n—Si(R5)4-n), a third monomer represented by Chemical Formula 3 (Si(R6)4), and a fourth monomer represented by Chemical Formula 4 ((R7)3—Si—R8—Si—(R7)3) are provided.

Abstract: The present invention relates to a photoresist stripper composition for manufacturing a display, and more particularly, to an integrated photoresist stripper composition which can be used in every process for manufacturing a display. More specifically, the photoresist stripper composition for manufacturing a display according to the present invention can be applied to all of transition metals and oxide semiconductor wirings, and has an excellent ability to remove modified photoresist after a hard bake process, and implant process, and a dry etch process have been performed. In particular, the photoresist stripper composition for manufacturing a display according to the present invention exhibits a corrosion inhibitory effect that has been further specialized for copper (Cu) wiring pattern edge portions which are susceptible to corrosion following dry-etching.

Abstract: The present invention relates to a polysilsesquioxane resin composition for a flexible substrate. More specifically, the present invention relates to a polysilsesquioxane resin composition for a flexible substrate, having excellent heat resistance and transparency, the resin composition being usable for a flexible display substrate. More specifically, a transparent thin film can be formed, excellent transmittance is exhibited in the visible range even after curing, heat resistance is excellent, and flexibility and crack resistance can be controlled. Compared to a conventional polyimide-based substrate material, the present invention has excellent insulation characteristics and passivation characteristics, which can be satisfied simultaneously, and is advantageous for productivity since release characteristics are ensured during a delamination process from a glass substrate.

Abstract: The present disclosure relates to a photoresist stripper composition for manufacturing an LCD, and relates to an integrated photoresist stripper composition capable of being used in all processes for manufacturing a TFT-LCD. More specifically, the present disclosure relates to an aqueous photoresist stripper composition capable of being used in all of transition metal, potential metal and oxide semiconductor wires.

Abstract: The present invention relates to a polysilsesquioxane resin composition having a high heat resistance and low dielectric constant and applicable to a liquid crystal display, an OLED, a touch panel, electronic paper, a flexible display, etc. and a black resist composition for light-shielding comprising the same. More specifically, the present invention relates to a light-shielding black resist composition having high heat resistance and low dielectric characteristics, which comprises: 1) a polysilsesquioxane random copolymer resin composition, which comprises a polar heterocyclic structure and can be cured by UV rays; 2) a carbon black dispersion liquid prepared by dispersing and coating in the polysilsesquioxane resin; and 3) a photoinitiator. The black resist resin composition of the present invention has excellent heat resistance even in a post process at high temperature of at least 350° C., no optical density (O.D.

Abstract: A photosensitive resin composition, an organic light emitting display device, and method for manufacturing an organic light emitting device, the composition including a photosensitive compound; a solvent; and a silsesquioxane-based copolymer, the silsesquioxane-based copolymer being obtained by copolymerizing a compound represented by the following Chemical Formula 1 with at least one of a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3; R1—R2—Si(R3)3??[Chemical Formula 1] R4—Si(R5)3??[Chemical Formula 2] Si(R6)4.

Abstract: The present invention relates to a highly heat resistant silsesquioxane-based photosensitive resin composition for a liquid crystal display device or an organic EL display device, and a positive resist insulating layer prepared therefrom, and in particular, to a silsesquioxane-based photosensitive resin composition having high heat resistance and a low dielectric property, capable of being used as an insulating layer forming a via hole of the thin film transistor (TFT), and simultaneously, capable of being used as an insulating layer for forming a bank pattern dividing pixels of an organic EL display device.

Abstract: The present invention relates to a polysilsesquioxane resin composition for a flexible substrate. More specifically, the present invention relates to a polysilsesquioxane resin composition for a flexible substrate, having excellent heat resistance and transparency, the resin composition being usable for a flexible display substrate. More specifically, a transparent thin film can be formed, excellent transmittance is exhibited in the visible range even after curing, heat resistance is excellent, and flexibility and crack resistance can be controlled. Compared to a conventional polyimide-based substrate material, the present invention has excellent insulation characteristics and passivation characteristics, which can be satisfied simultaneously, and is advantageous for productivity since release characteristics are ensured during a delamination process from a glass substrate.

Abstract: The present disclosure relates to a photoresist stripper composition for manufacturing an LCD, and relates to an integrated photoresist stripper composition capable of being used in all processes for manufacturing a TFT-LCD. More specifically, the present disclosure relates to an aqueous photoresist stripper composition capable of being used in all of transition metal, potential metal and oxide semiconductor wires.

Abstract: A photosensitive resin composition, an organic light emitting display device, and method for manufacturing an organic light emitting device, the composition including a photosensitive compound; a solvent; and a silsesquioxane-based copolymer, the silsesquioxane-based copolymer being obtained by copolymerizing a compound represented by the following Chemical Formula 1 with at least one of a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3; R1-R2—Si(R3)3??[Chemical Formula 1] R4—Si(R5)3??[Chemical Formula 2] Si(R6)4.

Abstract: The present invention relates to a highly heat resistant silsesquioxane-based photosensitive resin composition for a liquid crystal display device or an organic EL display device, and a positive resist insulating layer prepared therefrom, and in particular, to a silsesquioxane-based photosensitive resin composition having high heat resistance and a low dielectric property, capable of being used as an insulating layer forming a via hole of the thin film transistor (TFT), and simultaneously, capable of being used as an insulating layer for forming a bank pattern dividing pixels of an organic EL display device.

Abstract: The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process.

Abstract: The present invention proposes a method for removing an oxide formed on the surface of a copper film used in the process of manufacturing a circuit for a semiconductor, an organic light-emitting diode, an LED, or a liquid crystal display without causing corrosion on a lower metal film. The composition including corrosive amine may remove a metal oxide depending on the content of additive ranging from 0.01 to 10% regardless of the content of ultrapure water. A polar solvent other than the corrosive amine may efficiently remove an oxide from the surface of the metal when the same contains water and 0.01 to 20% of the additive.

Abstract: The present invention proposes a method for removing an oxide formed on the surface of a copper film used in the process of manufacturing a circuit for a semiconductor, an organic light-emitting diode, an LED, or a liquid crystal display without causing corrosion on a lower metal film. The composition including corrosive amine may remove a metal oxide depending on the content of additive ranging from 0.01 to 10% regardless of the content of ultrapure water. A polar solvent other than the corrosive amine may efficiently remove an oxide from the surface of the metal when the same contains water and 0.01 to 20% of the additive.

Abstract: The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process.

Abstract: A photoresist residue removal composition is provided. The photoresist residue removal composition essentially contains glycolic and water, to which a pH control agent and/or a cleanability improver is selectively added. The photoresist residue removal composition has a high capability to remove residues caused by plasma etching and ashing of a metal or silicon oxide layer under a photoresist pattern, does not cause corrosion, and is eco-friendly.

Abstract: Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80% by weight of a corrosion inhibitor shown in Formula 1; 10 to 80% by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2% by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components.

Abstract: A photoresist residue removal composition is provided. The photoresist residue removal composition essentially contains glycolic and water, to which a pH control agent and/or a cleanability improver is selectively added.

Abstract: Provided is a composition for removing polymer residue of a photosensitive etching-resistant layer. The composition includes 0.1 to 80% by weight of a corrosion inhibitor shown in Formula 1; 10 to 80% by weight of a pH control agent of which hydrogen ion concentration is in a weak basic range; 0.1 to 2% by weight of ammonium fluoride; and the remaining percentage by weight of water. The composition for removing the polymer residue can effectively remove insoluble residue generated during a semiconductor fabrication process without inflicting damage on an underlying layer and contains environment-friendly components.