Abstract: The present invention provides a method of fabricating a microlens, comprising providing a substrate with at least a dielectric layer thereon, forming a first thin film on the dielectric layer surface, etching the first thin film to form at least a micro bump, and forming a second thin film on the micro bump surface and dielectric layer surface, wherein the second thin film and the micro bump form the microlens. The present invention microlens can be applied in the environment with high temperature, and a passivation layer is not required for the present invention microlens.

Abstract: The present invention provides a microlens structure for a semiconductor device, including a substrate with at least a dielectric layer thereon, at least a micro bump positioned on the dielectric layer surface, and an optical film on the micro bump surface and dielectric layer surface, the micro bump and the optical film being the microlens.

Abstract: The present invention provides a method of fabricating a microlens, comprising providing a substrate with at least a dielectric layer thereon, forming a first thin film on the dielectric layer surface, etching the first thin film to form at least a micro bump, and forming a second thin film on the micro bump surface and dielectric layer surface, wherein the second thin film and the micro bump form the microlens. The present invention microlens can be applied in the environment with high temperature, and a passivation layer is not required for the present invention microlens.

Abstract: A method of fabricating an image sensor on a semiconductor substrate having a sensor array region is described. A first planar layer is formed on a semiconductor substrate. Then, a color filter array (CFA) is formed on the first planar layer. A second planar layer is formed on the color filter array. Thereafter, a plurality of U-lenses is formed on the second planar layer. A passivation is formed over the second planar layer and the U-lenses by performing a plasma-enhanced chemical vapor deposition (PECVD) process using TEOS gas. The passivation layer is formed under the conditions that include applying radio frequency power at a rating between 250W˜450W and supplying TEOS gas at a mass flow rate of about 150˜500 mg/m.

Abstract: A method of removing a copper oxide layer within a via hole. A copper layer is formed. A dielectric layer is formed on the copper layer. A via hole is formed to penetrate through the dielectric layer and expose a part of the copper layer within the via hole. The exposed copper layer reacts with oxygen in air to form a copper oxide layer. Using 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, the copper oxide layer is removed.