Abstract: Provided is a sequential injection module included in a skin treatment device, the module sequentially injecting a gas and a drug into the skin of a user through one needle. The sequential injection module comprises: a supply port for supplying each of gas and a drug; an output port for discharging each of same; and a channel control part for forming, therein, either a gas flow channel or a drug flow channel by means of the pressure of the gas and drug to be supplied.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: In a method of manufacturing a semiconductor device, an isolation pattern may be formed on a substrate to define a plurality of active patterns. The active patterns may protrude from the isolation pattern. A preliminary polysilicon layer may be formed on the active patterns to fill a gap between adjacent ones of the active patterns. Ions having no conductivity may be implanted into the preliminary polysilicon layer to form a polysilicon layer having no void. The active patterns maintain their crystalline state during the implanting of the ions. The polysilicon layer may be patterned to form a dummy gate structure on the active pattern. A source/drain region may be formed at an upper portion of the active patterns adjacent to sides of the dummy gate structure.

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: In a method of manufacturing a semiconductor device, an isolation pattern may be formed on a substrate to define a plurality of active patterns. The active patterns may protrude from the isolation pattern. A preliminary polysilicon layer may be formed on the active patterns to fill a gap between adjacent ones of the active patterns. Ions having no conductivity may be implanted into the preliminary polysilicon layer to form a polysilicon layer having no void. The active patterns maintain their crystalline state during the implanting of the ions. The polysilicon layer may be patterned to form a dummy gate structure on the active pattern. A source/drain region may be formed at an upper portion of the active patterns adjacent to sides of the dummy gate structure.

Abstract: A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: Semiconductor devices and methods for fabricating the same are provided. The semiconductor devices include a fin active pattern formed to project from a substrate, a gate electrode formed to cross the fin active pattern on the substrate, a gate spacer formed on a side wall of the gate electrode and having a low dielectric constant and an elevated source/drain formed on both sides of the gate electrode on the fin active pattern. The gate spacer includes first, second and third spacers that sequentially come in contact with each other in a direction in which the gate spacer goes out from the gate electrode, and a carbon concentration of the second spacer is lower than carbon concentrations of the first and third spacers.

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Abstract: A blood pump actuator to generate a driving force for driving a blood pump is disclosed. The blood pump actuator includes: a motor unit having a stator and a rotor, and rotating to generate a rotating force; a cam unit to convert the rotating motion of the motor unit into a rectilinear reciprocating motion; and a bellows unit having a bellows, which is expandable and contractible and contains a fluid therein, and an upper bellows plate and a lower bellows plate respectively attached to the upper and lower ends of the bellows, wherein the lower bellows plate moves upwards and downwards in a vertical direction according to the rectilinear reciprocating motion of the cam unit engaging with the lower bellows plate, and the bellows repeatedly expands and contracts according to the vertical movement of the lower bellows plate.

Abstract: A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.

Abstract: A blood pump actuator to generate a driving force for driving a blood pump is disclosed. The blood pump actuator includes: a motor unit having a stator and a rotor, and rotating to generate a rotating force; a cam unit to convert the rotating motion of the motor unit into a rectilinear reciprocating motion; and a bellows unit having a bellows, which is expandable and contractible and contains a fluid therein, and an upper bellows plate and a lower bellows plate respectively attached to the upper and lower ends of the bellows, wherein the lower bellows plate moves upwards and downwards in a vertical direction according to the rectilinear reciprocating motion of the cam unit engaging with the lower bellows plate, and the bellows repeatedly expands and contracts according to the vertical movement of the lower bellows plate.

Abstract: A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.

Abstract: A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.

Abstract: A method for synchronizing use Information of a mobile communication terminal and a system are provided. In system and method, for synchronizing use information between a first mobile communication terminal and a second mobile communication terminal including short-range wireless communication units includes requesting connection for use information synchronization to the second mobile communication terminal by the first mobile communication terminal, if a response signal to the connection request is received from the second mobile communication terminal, transmitting use information of the first mobile communication terminal to the second mobile communication terminal, and updating by the second mobile communication terminal use information of the second mobile communication terminal using the transmitted use information of the first mobile communication terminal.

Abstract: A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.