Patents by Inventor Ho-Ta CHUANG

Ho-Ta CHUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density plasma reactor with multiple top coils
    Patent number: 9607809
    Abstract: A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is formed in the enclosure for withdrawing gas from the chamber. A platform is positioned to support a wafer in the chamber above the bottom. A plurality of coils is positioned above the top of the chamber. Each coil is coupled to a radio frequency generator.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: March 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Ching Lo, Po-Hsiung Leu, Tzu-Chun Lin, Ding-I Liu, Jen-Chi Chang, Ho-Ta Chuang
  • HIGH DENSITY PLASMA REACTOR WITH MULTIPLE TOP COILS
    Publication number: 20140273537
    Abstract: A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is formed in the enclosure for withdrawing gas from the chamber. A platform is positioned to support a wafer in the chamber above the bottom. A plurality of coils is positioned above the top of the chamber. Each coil is coupled to a radio frequency generator.
    Type: Application
    Filed: March 12, 2014
    Publication date: September 18, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Ching LO, Po-Hsiung LEU, Tzu-Chun LIN, Ding-I LIU, Jen-Chi CHANG, Ho-Ta CHUANG