Patents by Inventor Ho-Ung Kim

Ho-Ung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009289
    Abstract: A semiconductor package and a method of manufacturing a semiconductor package. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a substrate having a first surface and a second surface opposite to the first surface, and comprising at least one first recess portion formed in a direction ranging from the first surface toward the second surface, a plurality of first recess conductive patterns formed in the first recess portion, and a first passive element inserted into the first recess portion of the substrate and having a first electrode and a second electrode electrically connected to the plurality of first recess conductive patterns.
    Type: Grant
    Filed: October 14, 2021
    Date of Patent: June 11, 2024
    Assignee: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Jae Ung Lee, Yung Woo Lee, EunNaRa Cho, Dong Hyun Bang, Wook Choi, KooWoong Jeong, Byong Jin Kim, Min Chul Shin, Ho Jeong Lim, Ji Hyun Kim, Chang Hun Kim
  • Patent number: 8530975
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: September 10, 2013
    Assignee: SK hynix Inc.
    Inventor: Ho-Ung Kim
  • Publication number: 20120235248
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Application
    Filed: May 29, 2012
    Publication date: September 20, 2012
    Applicant: Hynix Semiconductor Inc.
    Inventor: Ho-Ung KIM
  • Patent number: 8187931
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Grant
    Filed: June 29, 2008
    Date of Patent: May 29, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventor: Ho-Ung Kim
  • Publication number: 20090090985
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Application
    Filed: June 29, 2008
    Publication date: April 9, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventor: Ho-Ung KIM