Abstract: One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Abstract: Varied embodiments of a laser-based machine tool, and techniques for controlling the same are provided. Some embodiments relate to techniques to facilitate uniform and reproducible processing of workpieces. Other embodiments relate to a zoom lens having a quickly-variable focal length. Still other embodiments relate to various features of a laser-based multi-axis machine tool that can facilitate efficient delivery of laser energy to a scan head, that can address thermomechanical issues that may arise during workpiece processing, etc. Another embodiment relates to techniques for minimizing or preventing undesired accumulation of particulate matter on workpiece surfaces during processing. A number of other embodiments and arrangements are also detailed.

Abstract: One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Abstract: One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Abstract: One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Abstract: One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Abstract: One embodiment of the present invention can be characterized as a method for controlling a multi-axis machine tool that includes obtaining a preliminary rotary actuator command (wherein the rotary actuator command has frequency content exceeding a bandwidth of a rotary actuator), generating a processed rotary actuator command based, at least in part, on the preliminary rotary actuator command, the processed rotary actuator command having frequency content within a bandwidth of the rotary actuator and generating a first linear actuator command and a second linear actuator command based, at least in part, on the processed rotary actuator command. The processed rotary actuator command can be output to the rotary actuator, the first linear actuator command can be output to a first linear actuator and the second linear actuator command can be output to a second linear actuator.

Abstract: A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.

Abstract: A laser-based workpiece processing system includes sensors connected to a sensor controller that converts sensor signals into focused spot motion commands for actuating a beam steering device, such as a two-axis steering mirror. The sensors may include a beam position sensor for correcting errors detected in the optical path, such as thermally-induced beam wandering in response to laser or acousto-optic modulator pointing stability, or optical mount dynamics.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

Abstract: A system determines relative positions of a semiconductor substrate and a plurality of laser beam spots on or within the semiconductor substrate in a machine for selectively irradiating structures on or within the substrate using a plurality of laser beams. The system comprises a laser source, first and second laser beam propagation paths, first and second reflection sensors, and a processor. The laser source produces at least the first and second laser beams, which propagate toward the substrate along the first and second propagation paths, respectively, which have respective first and second axes that intersects the substrate at respective first and second spots. The reflection sensors are positioned to detect reflection of the spots, as the spots moves relative to the substrate, thereby generating reflection signals. The processor is configured to determine, based on the reflection signals, positions of the spots on or within the substrate.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: A system for forming two laser processing beams with controlled stability at a target specimen work surface includes first and second mutually coherent laser beams propagating along separate first and second beam paths that are combined to perform an optical property adjustment. The combined laser beams are separated into third and fourth laser beams propagating along separate beam paths and including respective third and fourth main beam components, and one of the third and fourth laser beams contributes a leakage component that copropagates in mutual temporal coherence with the main beam component of the other of the third and fourth laser beams. An effect of mutual temporal coherence of the leakage component and the other main beam component with which the leakage component copropagates is reduced through acousto-optic modulation frequency shifts or through incorporation of an optical path length difference in the two beams.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

Abstract: A method of and system for forming two laser processing beams with controlled stability at a target specimen work surface includes first and second mutually coherent laser beams propagating along separate first and second beam paths that are combined to perform an optical property adjustment. The combined laser beams are separated into third and fourth laser beams propagating along separate beam paths and including respective third and fourth main beam components, and one of the third and fourth laser beams contributes a leakage component that copropagates in mutual temporal coherence with the main beam component of the other of the third and fourth laser beams. An effect of mutual temporal coherence of the leakage component and the other main beam component with which the leakage component copropagates is reduced through acousto-optic modulation frequency shifts or through incorporation of an optical path length difference in the two beams.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.

Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.

Abstract: Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row.