Patents by Inventor Ho Y. Kwon

Ho Y. Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making oxide semiconductor field effect transistor
    Patent number: 5424234
    Abstract: A method of making a MOSFET wherein a source/drain region is graded into three region portions having different concentrations. The method comprises the steps of forming a gate, an insulating film and a semiconductor film on a semiconductor substrate of a first conductivity type, and etching the insulating film and the semiconductor film to form gate side wall spacers. A first source/drain region is formed by implanting an impurity of a second conductivity type by using gate side wall spacers and a gate as a mask. After removing a portion of the semiconductor film corresponding to the upper portion of each gate side wall spacer, an impurity of the second conductivity type is implanted in the semiconductor substrate by using the remaining thin insulating film and the gate as a mask.
    Type: Grant
    Filed: March 3, 1994
    Date of Patent: June 13, 1995
    Assignee: Goldstar Electron Co., Ltd.
    Inventor: Ho Y. Kwon
  • Method for the fabrication of transistor
    Patent number: 5374574
    Abstract: A method for fabricating a transistor having a lightly doped drain structure is disclosed.
    Type: Grant
    Filed: November 23, 1993
    Date of Patent: December 20, 1994
    Assignee: Goldstar Electron Co., Ltd.
    Inventor: Ho Y. Kwon