Patents by Inventor Ho Y. Yu

Ho Y. Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of passivating a semiconductor device utilizing dual polycrystalline layers
    Patent number: 4194934
    Abstract: A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat.The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
    Type: Grant
    Filed: April 10, 1979
    Date of Patent: March 25, 1980
    Assignee: Varo Semiconductor, Inc.
    Inventors: Theodore A. Blaske, Ho Y. Yu
  • Passivated semiconductor device and method of making same
    Patent number: 4161744
    Abstract: A semiconductor device is surface-passivated by a multi-layer film which includes a base coat of substantially undoped polycrystalline silicon in intimate contact with the substrate and bridging the semiconductor junction. A top coat of polycrystalline silicon is doped with oxygen and disposed overlying the base coat.The method of passivating a semiconductor device includes initial formation of a base layer of substantially undoped polycrystalline silicon from a controlled atmosphere of a silane material. This is advantageously followed by a deposition of oxygen-doped polycrystalline silicon in continuation of the atmosphere of silane material with the added introduction of a gaseous oxygen donor.
    Type: Grant
    Filed: May 23, 1977
    Date of Patent: July 17, 1979
    Assignee: Varo Semiconductor, Inc.
    Inventors: Theodore A. Blaske, Ho Y. Yu