Abstract: The present invention relates to a method of continuously recycling thermoset plastic waste. The method includes crushing the thermoset plastic waste into pieces with a diameter size suitable for being fed into an extruder. The method also includes purifying the thermoset plastic waste by cleaning the thermoset plastic waste using a cleaning agent to remove contaminants from the thermoset plastic waste. The method also includes extruding the thermoset plastic waste by using supercritical solvent.

Abstract: The present invention relates to a method of continuously recycling thermoset plastic waste. The method includes crushing the thermoset plastic waste into pieces with a diameter size suitable for being fed into an extruder. The method also includes purifying the thermoset plastic waste by cleaning the thermoset plastic waste using a cleaning agent to remove contaminants from the thermoset plastic waste. The method also includes extruding the thermoset plastic waste by using supercritical solvent.

Abstract: Disclosed is an environmentally friendly recycling process for expanded polystyrene (EPS) wastes using dissolution process and supercritical CO2 extraction process. The recycling process may enable condensing an expanded polystyrene (EPS) by dissolving the EPS into a solvent and one or more additives thereby obtaining an expanded polystyrene (EPS) solution. The recycling process may further enable purifying the EPS solution using at least one of a filtration process and a separation process in order to obtain a purified expanded polystyrene (EPS) solution. Further, the recycling process may further enable extracting the polystyrene from the solvent in the purified expanded polystyrene (EPS) solution using a supercritical CO2 extraction method in order to obtain a recycled polystyrene. The recycling process enables in significant reduction of the volume of EPS thereby saving the logistical cost as well as facilitating increase in quantity, quality and purity of the recycled polystyrene.

Abstract: A sputter source is provided. The sputter source includes a shaft extending through a central region of the sputter source. A first end of the shaft is coupled to a drive and a second end of the shaft is coupled to a bottom plate. A first plate having a ramped surface is included where the first plate is stationary. A second plate having a ramped surface is provided where the second plate is disposed above the first plate such that portions of the ramped surfaces contact each other. The second plate is coupled to the shaft, wherein the second plate is operable to rotate and move axially as the shaft rotates in a first direction and wherein the second plate is operable to remain stationary as the shaft rotates in a second direction.

Abstract: Provided are methods and systems for forming discreet multilayered structures. Each structure may be deposited by in situ deposition of multiple layers at one of multiple site isolation regions provided on the same substrate for use in combinatorial processing. Alignment of different layers within each structure is provided by using two or more differently sized openings in-between one or more sputtering targets and substrate. Specifically, deposition of a first layer is performed through the first opening that defines a first deposition area. A shutter having a second smaller opening is then positioned in-between the one or more targets and substrate. Sputtering of a second layer is then performed through this second opening that defines a second deposition area. This second deposition area may be located within the first deposition area based on sizing and alignment of the openings as well as alignment of the substrate.

Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

Abstract: Provided are methods and systems for forming discreet multilayered structures. Each structure may be deposited by in situ deposition of multiple layers at one of multiple site isolation regions provided on the same substrate for use in combinatorial processing. Alignment of different layers within each structure is provided by using two or more differently sized openings in-between one or more sputtering targets and substrate. Specifically, deposition of a first layer is performed through the first opening that defines a first deposition area. A shutter having a second smaller opening is then positioned in-between the one or more targets and substrate. Sputtering of a second layer is then performed through this second opening that defines a second deposition area. This second deposition area may be located within the first deposition area based on sizing and alignment of the openings as well as alignment of the substrate.

Abstract: A sputter source is provided. The sputter source includes a shaft extending through a central region of the sputter source. A first end of the shaft is coupled to a drive and a second end of the shaft is coupled to a bottom plate. A first plate having a ramped surface is included where the first plate is stationary. A second plate having a ramped surface is provided where the second plate is disposed above the first plate such that portions of the ramped surfaces contact each other. The second plate is coupled to the shaft, wherein the second plate is operable to rotate and move axially as the shaft rotates in a first direction and wherein the second plate is operable to remain stationary as the shaft rotates in a second direction.

Abstract: Embodiments provided herein describe systems and methods for aligning sputtering sources, such as in a substrate processing tool. The substrate processing tool includes at least one sputtering source and a device. Each of sputtering sources includes a target having a central axis. The device has an axis and is detachably coupled to the at least one sputtering source. The device indicates to a user a direction in which the central axis of the target of the at least one sputtering source is oriented.

Abstract: A substrate processing tool including a frame forming at least one isolatable chamber configured to hold a controlled atmosphere, at least two substrate supports located within each of the at least one isolatable chamber, each of the at least two substrate supports being stacked one above the other and configured to hold a respective substrate and a cooling unit communicably coupled to the at least two substrate supports such that the at least two substrate supports and cooling unit effect simultaneous conductive cooling of each of the respective substrates located on the at least two substrate supports.