Patents by Inventor Ho-Young Cha

Ho-Young Cha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and systems
    Patent number: 8198650
    Abstract: A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.
    Type: Grant
    Filed: December 8, 2008
    Date of Patent: June 12, 2012
    Assignee: General Electric Company
    Inventors: Stanislav Ivanovich Soloviev, Ho-Young Cha, Peter Micah Sandvik, Alexey Vert, Jody Alan Fronheiser
  • SEMICONDUCTOR DEVICES AND SYSTEMS
    Publication number: 20100140730
    Abstract: A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.
    Type: Application
    Filed: December 8, 2008
    Publication date: June 10, 2010
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Stanislav Ivanovich Soloviev, Ho-Young Cha, Peter Micah Sandvik, Alexey Vert, Jody Alan Fronheiser
  • HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD
    Publication number: 20090140293
    Abstract: A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article.
    Type: Application
    Filed: November 29, 2007
    Publication date: June 4, 2009
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Alexei Vertiatchikh, Kevin Sean Matocha, Peter Micah Sandvik, Vinayak Tilak, Siddharth Rajan, Ho-Young Cha