Abstract: The present invention provides a high strength steel plate for a structure and a method of manufacturing same, wherein the high strength steel plate fora structure comprises, by weight %, 0.03% (inclusive) to 0.1% (exclusive) of C, 0.1% (inclusive) to 0.8% (exclusive) of Si, 0.3% (inclusive) to 1.5% (exclusive) of Mn, 0.5% (inclusive) to 1.5% (exclusive) of Cr, 0.1% (inclusive) to 0.5% (exclusive) of Cu, 0.01% (inclusive) to 0.08% (exclusive) of Al, 0.01% (inclusive) to 0.1% (exclusive) of Ti, 0.05% (inclusive) to 0.1% (exclusive) of Ni, 0.002% (inclusive) to 0.07% (exclusive) of Nb, 0.03% or less of P, 0.02% or less of S, and the balance of Fe and unavoidable impurities, and has a microstructure comprising, by area fraction, 20% or more of bainite, less than 80% of polygonal ferrite and acicular ferrite in total, and less than 10% of pearlite and MA as the other phases.

Abstract: Methods of forming memory devices are described. Some embodiments of the disclosure utilize a low temperature anneal process to reduce bottom voids and seams in low melting point, low resistance metal buried word lines. Some embodiments of the disclosure utilize a high density dielectric cap during a high temperature anneal process to reduce bottom voids in buried word lines.

Abstract: Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

Abstract: According to an exemplary embodiment, a microneedle probe device for measuring a sap flow rate of a plant includes: a substrate, of which at least a part is inserted into a plant, and a thickness and a width are microscales; a single metal wire provided on the substrate; a power source, which applies a current to the metal wire for a predetermined time and heats the metal wire; and a processor, which calculates a flow rate of sap through a movement of heat generated in the metal wire according to a flow of the sap within the plant.

Abstract: A manufacturing method of narrow type inkjet print head chip is provided and includes steps of: (S1) providing a silicon substrate; (S2) arranging and disposing an active component layer by utilizing a first type photomask on at least two high-precision regions of each of a plurality of inkjet print head chip regions on the silicon substrate; (S3) arranging and disposing a passive component layer by utilizing a second type photomask on the active component layer; and (S4) cutting the silicon substrate according to the inkjet print head chip regions so as to form the plurality of narrow type inkjet print head chips.

Abstract: A nonvolatile memory device may include a plurality of memory planes and a plurality of plane-dedicated pad sets. The plurality of memory planes may include a plurality of memory cell arrays including nonvolatile memory cells and a plurality of page buffer circuits. Each of the plurality of page buffer circuits may be connected to ones of the nonvolatile memory cells included in each of the plurality of memory cell arrays through bitlines. A plurality of plane-dedicated pad sets may be connected to the plurality of page buffer circuits through a plurality of data paths respectively such that each of the plurality plane-dedicated pad sets is dedicatedly connected to each of the plurality of page buffer circuits. A bandwidth of a data transfer may be increased by reducing a data transfer delay and supporting a parallel data transfer, and power consumption may be decreased by removing data multiplexing and/or signal routing.

Abstract: A narrow type inkjet print head chip is disclosed and includes a silicon substrate, an active component layer and a passive component layer. The active component layer is stacked on the silicon substrate and includes plural ESD protection units, plural encoder switches, plural discharge protection units and plural heater switches. The ESD protection units, the encoder switches, the discharge protection units and the heater switches are disposed in each of at least two high-precision regions of the active component layer. The corresponding positions and quantities of these components are the same in the at least two high-precision regions. The passive component layer is stacked on the active component layer and includes plural heaters, plural electrode pads, plural encoders and plural circuit traces. The circuit traces are electrically connected to the ESD protection units, the encoder switches, the heater switches, the heaters, the electrode pads and the encoders.

Abstract: A metal-insulator-metal (MIM) capacitor includes a substrate, a first metal layer, a deposition structure, a dielectric layer and a second metal layer. The first metal layer is disposed on the substrate and has a planarized surface. The deposition structure is disposed on the first metal layer, and at least a portion of the deposition structure extends into the planarized surface, wherein the first metal layer and the deposition structure have the same material. The dielectric layer is disposed on the deposition structure. The second metal layer is disposed on the dielectric layer.

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Abstract: An organic light-emitting diode display may have thin-film transistor circuitry formed on a substrate. The display and substrate may have rounded corners. A pixel definition layer may be formed on the thin-film transistor circuitry. Openings in the pixel definition layer may be provided with emissive material overlapping respective anodes for organic light-emitting diodes. A cathode layer may cover the array of pixels. A ground power supply path may be used to distribute a ground voltage to the cathode layer. The ground power supply path may be formed from a metal layer that is shorted to the cathode layer using portions of a metal layer that forms anodes for the diodes, may be formed from a mesh shaped metal pattern, may have L-shaped path segments, may include laser-deposited metal on the cathode layer, and may have other structures that facilitate distribution of the ground power supply.

Abstract: An organic light-emitting diode display may have thin-film transistor circuitry formed on a substrate. The display and substrate may have rounded corners. A pixel definition layer may be formed on the thin-film transistor circuitry. Openings in the pixel definition layer may be provided with emissive material overlapping respective anodes for organic light-emitting diodes. A cathode layer may cover the array of pixels. A ground power supply path may be used to distribute a ground voltage to the cathode layer. The ground power supply path may be formed from a metal layer that is shorted to the cathode layer using portions of a metal layer that forms anodes, may be formed from a mesh shaped metal pattern, may have L-shaped path segments, and may include laser-deposited metal on the cathode layer. Data lines may be formed from metal layers in the active area to accommodate the rounded corners of the display.

Abstract: A micro fluid actuator includes a first substrate, a chamber layer, a vibration layer, a first metal layer, a piezoelectric actuation layer, a second metal layer, a second substrate, an inlet layer, a resonance layer and an aperture array plate. The first substrate includes a plurality of first outflow apertures and a plurality of second outflow apertures. The chamber layer includes a storage chamber. The second metal layer includes an upper electrode pad and a lower electrode pad. While driving power having different phase charges is provided to the upper electrode pad and the lower electrode pad to drive and control the vibration layer to displace in a reciprocating manner, the fluid is inhaled from the exterior through the inlet layer, converged to the storage chamber, compressed and pushes out the aperture array plate, and then is discharged out from the micro fluid actuator to achieve fluid transportation.

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Abstract: Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (AlOx) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.

Abstract: A display may have rows and columns of pixels that form an active area for displaying images. A display driver integrated circuit may provide multiplexed data signals to demultiplexer circuitry in the display. The demultiplexer circuitry may demultiplex the data signals and provide the demultiplexed data signals to the pixels on data lines. Gate lines may control the loading of the data signals into the pixels. The display may have a length dimension and a width dimension that is shorter than the length dimension. The data lines may extend parallel to the width dimension and the gate lines may extend parallel to the length dimension such that there are more data lines than gate lines in the display. A notch that is free of pixels may extend into the active area. Data lines extending parallel to the width dimension of the display may be routed around the notch.

Abstract: An apparatus for removing residues from a source vessel in an extreme ultraviolet lithography device, the apparatus including a frame portion, and a heater structure on the frame portion, the heater structure having a head on the frame portion, the head being rotatable in at least one shaft direction, and a heater on the head to dissipate heat toward residues in the source vessel, the heater to apply temperature of 200° C. to 800° C.

Abstract: Disclosed is a lower cross member of a vehicle. The lower cross member includes a core member configured to be disposed on a vehicle floor so as to extend in a width direction of the vehicle, to be formed of a composite material including unidirectional carbon fiber or bidirectional carbon fiber, and to have a cross-section including at least one closed curve, a lower layer configured to extend in an extending direction of the core member, to be disposed between the core member and the vehicle floor, and to be formed of a composite material including a first multi-axial glass fabric, and an upper layer configured to extend in the extending direction of the core member, to be disposed on an upper surface of the core member, and to be formed of a composite material including a second multi-axial glass fabric.

Abstract: A nonvolatile memory device may include a plurality of memory planes and a plurality of plane-dedicated pad sets. The plurality of memory planes may include a plurality of memory cell arrays including nonvolatile memory cells and a plurality of page buffer circuits. Each of the plurality of page buffer circuits may be connected to ones of the nonvolatile memory cells included in each of the plurality of memory cell arrays through bitlines. A plurality of plane-dedicated pad sets may be connected to the plurality of page buffer circuits through a plurality of data paths respectively such that each of the plurality plane-dedicated pad sets is dedicatedly connected to each of the plurality of page buffer circuits. A bandwidth of a data transfer may be increased by reducing a data transfer delay and supporting a parallel data transfer, and power consumption may be decreased by removing data multiplexing and/or signal routing.

Abstract: An embodiment of the present invention provides wear-resistant steel having excellent hardness and impact toughness and a method for producing same, wherein the wear-resistant steel comprises: 0.29-0.37 wt % of carbon (C), 0.1-0.7 wt % of silicon (Si), 0.6-1.6 wt % of manganese (Mn), 0.05 wt % or less of phosphorus (P), 0.02 wt % or less of sulfur (S), 0.07 wt % or less of aluminum (Al), 0.1-1.5 wt % of chromium (Cr), 0.01-0.8 wt % of molybdenum (Mo), 0.01-0.08 wt % of vanadium (V), 50 ppm or less of boron (B), and 0.02 wt % or less of cobalt (Co); further comprises one or more selected from the group consisting of 0.5 wt % or less of nickel (Ni), 0.5 wt % or less of copper (Cu), 0.02 wt % or less of titanium (Ti), 0.05 wt % or less of niobium (Nb), and 2-100 ppm of calcium (Ca); and comprises the remainder of Fe and other inevitable impurities.

Abstract: An extreme ultraviolet (EUV) light concentrating apparatus including a main body having a concave inner portion and configured to rotate, a tin generator configured to generate tin drops and spray the tin drops, a tin catcher configured to process the sprayed tin drops, a protective cover configured to block the tin drops from falling into the main body, and a rotation guide configured to rotate the main body may be provided.