Patents by Inventor Ho Yup Kwon

Ho Yup Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor device for preventing occurrence of short circuit between bit line contact plug and storage node contact plug
    Patent number: 8148250
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: April 3, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hyoung Joon Kim, Ho Yup Kwon, Jeong Hoon Park, Sung Hyun Kim
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING OCCURRENCE OF SHORT CIRCUIT BETWEEN BIT LINE CONTACT PLUG AND STORAGE NODE CONTACT PLUG
    Publication number: 20110045670
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.
    Type: Application
    Filed: October 28, 2010
    Publication date: February 24, 2011
    Inventors: Hyoung Joon KIM, Ho Yup KWON, Jeong Hoon PARK, Sung Hyun KIM
  • Method for manufacturing semiconductor device for preventing occurrence of short circuit between bit line contact plug and storage node contact plug
    Patent number: 7846827
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.
    Type: Grant
    Filed: May 18, 2009
    Date of Patent: December 7, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Hyoung Joon Kim, Ho Yup Kwon, Jeong Hoon Park, Sung Hyun Kim
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FOR PREVENTING OCCURRENCE OF SHORT CIRCUIT BETWEEN BIT LINE CONTACT PLUG AND STORAGE NODE CONTACT PLUG
    Publication number: 20100233878
    Abstract: A method for manufacturing a semiconductor device includes the steps of forming a plug on a semiconductor substrate, forming an insulation layer over the semiconductor substrate having the plug formed thereon, defining a line type trench through a first etching of a partial thickness of the insulation layer; and defining a contact hole through a second etching of a portion of the insulation layer corresponding to the bottom of the trench so as to expose the plug.
    Type: Application
    Filed: May 18, 2009
    Publication date: September 16, 2010
    Inventors: Hyoung Joon KIM, Ho Yup KWON, Jeong Hoon PARK, Sung Hyun KIM
  • Semiconductor device, and method for manufacturing the same
    Patent number: 6844602
    Abstract: The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: January 18, 2005
    Assignee: Hynix Semiconductor, Inc.
    Inventor: Ho Yup Kwon
  • Semiconductor device, and method for manufacturing the same
    Patent number: 6838326
    Abstract: The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: January 4, 2005
    Assignee: Hynix Semiconductor, Inc.
    Inventor: Ho Yup Kwon
  • Semiconductor device, and method for manufacturing the same
    Publication number: 20040183137
    Abstract: The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.
    Type: Application
    Filed: April 1, 2004
    Publication date: September 23, 2004
    Applicant: Hynix Semiconductor Inc.
    Inventor: Ho Yup Kwon
  • Semiconductor device, and method for manufacturing the same
    Publication number: 20030122202
    Abstract: The present invention discloses semiconductor device which comprises a metal gate electrode surrounded by polysilicon layers and a gate insulating film whose edges are thicker than the center portion formed according to a reoxidation process using a thermal process before the formation of an ion implantation region in a process for forming the metal gate electrode using a replacement process and method for manufacturing the same.
    Type: Application
    Filed: December 27, 2002
    Publication date: July 3, 2003
    Inventor: Ho Yup Kwon