Patents by Inventor Hoa Truong
Hoa Truong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11226561Abstract: A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.Type: GrantFiled: August 11, 2018Date of Patent: January 18, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Chi-Chun Liu, Indira Seshadri, Kristin Schmidt, Nelson Felix, Daniel Sanders, Jing Guo, Ekmini Anuja De Silva, Hoa Truong
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Publication number: 20200050108Abstract: A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.Type: ApplicationFiled: August 11, 2018Publication date: February 13, 2020Inventors: Chi-Chun Liu, Indira Seshadri, Kristin Schmidt, Nelson Felix, Daniel Sanders, Jing Guo, Ekmini Anuja De Silva, Hoa Truong
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Publication number: 20080193879Abstract: Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.Type: ApplicationFiled: January 31, 2008Publication date: August 14, 2008Inventors: Robert Allen, Phillip Brock, Shiro Kusumoto, Yukio Nishimura, Daniel P. Sanders, Mark Steven Slezak, Ratnam Sooriyakumaran, Linda K. Sundberg, Hoa Truong, Gregory M. Wallraff
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Publication number: 20070254235Abstract: Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: ROBERT ALLEN, PHILLIP BROCK, CARL LARSON, DANIEL SANDERS, RATNAM SOORIYAKUMARAN, LINDA SUNDBERG, HOA TRUONG, GREGORY WALLRAFF
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Publication number: 20070254236Abstract: A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.Type: ApplicationFiled: April 28, 2006Publication date: November 1, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: ROBERT ALLEN, PHILLIP BROCK, CARL LARSON, RATNAM SOORIYAKUMARAN, LINDA SUNDBERG, HOA TRUONG
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Publication number: 20070231734Abstract: A photoresist composition including a polymer, a photo acid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.Type: ApplicationFiled: September 29, 2005Publication date: October 4, 2007Inventors: Robert Allen, Phillip Brock, Richard DiPietro, Ratnam Sooriyakumaran, Hoa Truong
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Publication number: 20060194144Abstract: A molecular resist composition and method of use is disclosed wherein the composition includes no silicon containing material, no polymeric material, and a substituted oligosaccharide, wherein the substituted oligosaccharide is substituted with at least one acid-cleavable —OR group, wherein the substituted oligosaccharide has 2 to 10 monosaccharides, wherein the molecular resist may be initially insoluble in developer, which may be an aqueous alkaline solution or developer consisting essentially of water. In some embodiments, the molecular resist may become soluble in the developer consisting essentially of water upon exposure to radiation having a wavelength of 193 nm or less and a post-exposure bake temperature from about room temperature to about 110° C. The resist material of the present invention may be used to print feature sizes wherein developed images may have a line/spacing not greater than than 120 nm when the developer consists essentially of water or an aqueous alkaline solution.Type: ApplicationFiled: February 28, 2005Publication date: August 31, 2006Inventors: Ratnam Sooriyakumaran, Hoa Truong
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Publication number: 20060128914Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: ApplicationFiled: January 12, 2006Publication date: June 15, 2006Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Debra Fenzel-Alexander, Carl Larson, David Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050124774Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard Dipietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050123852Abstract: Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C.Type: ApplicationFiled: December 4, 2003Publication date: June 9, 2005Inventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff
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Publication number: 20050112382Abstract: A nonpolymeric silsesquioxane is provided wherein at least one silicon atom of the silsesquioxane is directly or indirectly bound to an acid-cleavable substituent RCL. The silsesquioxane has a glass transition temperature Tg of greater than 50° C, and the RCL substituent can be cleaved from the silsesquioxane at a temperature below Tg, generally at least 5° C. below Tg. The remainder of the silicon atoms within the silsesquioxane structure may be bound to additional acid-cleavable groups, acid-inert polar groups RP, and/or acid-inert nonpolar groups RNP. The nonpolymeric silsesquioxane can be a polyhedral silsesquioxane optionally having one to three open vertices, such that the polyhedron appears to be a “partial cage” structure, or a macromer of two to four such polyhedral silsesquioxanes. Photoresist compositions containing the novel nonpolymeric silsesquioxanes are also provided, as is a method for using the compositions in preparing a patterned substrate.Type: ApplicationFiled: November 24, 2003Publication date: May 26, 2005Inventors: Robert Allen, Wu-Song Huang, Mahmoud Khojasteh, Qinghuang Lin, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong
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Publication number: 20050019696Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.Type: ApplicationFiled: August 12, 2004Publication date: January 27, 2005Applicant: International Business Machines CorporationInventors: Robert Allen, Gregory Breyta, Phillip Brock, Richard DiPietro, Debra Fenzel-Alexander, Carl Larson, David Medeiros, Dirk Pfeiffer, Ratnam Sooriyakumaran, Hoa Truong, Gregory Wallraff