Patents by Inventor Hoan Hai Nguyen

Hoan Hai Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100108263
    Abstract: Embodiments of liners for semiconductor process chambers are provided herein. In some embodiments, a liner for a semiconductor process chamber includes a first portion configured to line at least a portion of an inner volume of the semiconductor process chamber and a second portion configured to line at least a portion of a pump port of the semiconductor process chamber. In some embodiments, the first portion and the second portion are coupled together. In some embodiments, the first portion and the second portion of the liner may be fabricated a single piece. In some embodiments, the liner may be disposed in a process chamber having an inner volume and a pump port fluidly coupled to the inner volume.
    Type: Application
    Filed: October 30, 2008
    Publication date: May 6, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: HOAN Hai NGUYEN, Michael D. Willwerth
  • Publication number: 20020100557
    Abstract: A method and an apparatus that provides efficient heating of a dielectric structure without compromising the dielectric properties of the structure. A heating assembly is adapted to fit a circularly shaped dielectric lid of a plasma processing vacuum chamber. The heating assembly is placed between the RF coil and the atmospheric side of the dielectric lid. Although the active heating structure portion (a resistive heating wire or a thermal working fluid or both, per alternate embodiments) of the heating assembly is transparent to the electromagnetic fields produced by the coil, the conductive portion of the heating assembly takes on the role of shaping the electric field. The result of this averaging is the minimization of detrimental effects of electromagnetic potentials that are too high (e.g., sputtering of the dielectric by the plasma) and of electromagnetic potentials that are too low (e.g., heavy by-product depositions on the dielectric lid).
    Type: Application
    Filed: January 29, 2001
    Publication date: August 1, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Maocheng Li, John Holland, Valentin N. Todorov, Patrick Leahey, Robert P. Hartlage, Hoan Hai Nguyen
  • Patent number: 5641375
    Abstract: A thin flexible removeable shield made of electrically conducting material presses against the interior walls of an apertured processing chamber to protect the processing chamber walls from erosion from the reactive plasma gases. The shield and walls are electrically interconnected with a sleeve-like conductive insert overlapping a surface portion of the shield and passing through the shield and lining a chamber aperture, with the insert also insuring the positioning of the insert against the wall. The remaining exposed surface of the shield has a protective anodization. A conductive connector preferably also connects the insert to another interior chamber structure at the same electrical potential as the chamber walls.
    Type: Grant
    Filed: August 15, 1994
    Date of Patent: June 24, 1997
    Assignee: Applied Materials, Inc.
    Inventors: Petru N. Nitescu, Hoan Hai Nguyen