Abstract: An electronic device for monitoring a scene via a set of sensor(s) includes an acquisition module, of at least one representation of the scene via the sensor set, and a module for converting each representation into a respective occupancy grid. Each grid includes several zones, each corresponding to a respective portion of the representation, and each zone being in an occupied state if said portion contains an object and in an unoccupied state otherwise. The device also includes a module for calculating a differential grid corresponding to a difference between a current occupancy grid and a reference occupancy grid, by ignoring each zone of the reference grid which is in the occupied state and for which the corresponding zone of the current grid is in the unoccupied state, and a module for detecting a change in the scene, starting from the differential grid.

Abstract: An electronic device for monitoring a scene via a set of sensor(s) includes an acquisition module, of at least one representation of the scene via the sensor set, and a module for converting each representation into a respective occupancy grid. Each grid includes several zones, each corresponding to a respective portion of the representation, and each zone being in an occupied state if said portion contains an object and in an unoccupied state otherwise. The device also includes a module for calculating a differential grid corresponding to a difference between a current occupancy grid and a reference occupancy grid, by ignoring each zone of the reference grid which is in the occupied state and for which the corresponding zone of the current grid is in the unoccupied state, and a module for detecting a change in the scene, starting from the differential grid.

Abstract: A semiconductor device has a substrate including an opening. A trench is formed over the substrate around the opening. An interconnect structure is formed in the trench. An underfill material is disposed over the interconnect structure. A first semiconductor die is disposed over the underfill material prior to curing the underfill material. An active region of the first semiconductor die is disposed over the opening in the substrate. The trench contains the outward flow of underfill material. Underfill material is blocked from flowing over unintended areas on the surface of substrate, into the opening in the substrate, and over sensors of the first semiconductor die. A second semiconductor die is disposed over the substrate. The trench is formed by a first and second dam or a first insulating layer. A second insulating layer is formed over the first insulating layer. A dam is formed over the second insulating layer.

Abstract: A semiconductor device has a substrate including an opening. A trench is formed over the substrate around the opening. An interconnect structure is formed in the trench. An underfill material is disposed over the interconnect structure. A first semiconductor die is disposed over the underfill material prior to curing the underfill material. An active region of the first semiconductor die is disposed over the opening in the substrate. The trench contains the outward flow of underfill material. Underfill material is blocked from flowing over unintended areas on the surface of substrate, into the opening in the substrate, and over sensors of the first semiconductor die. A second semiconductor die is disposed over the substrate. The trench is formed by a first and second dam or a first insulating layer. A second insulating layer is formed over the first insulating layer. A dam is formed over the second insulating layer.