Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: A radio frequency (RF) module comprises a conductive top layer configured to improve RF interference-shielding functionality with respect to one or more RF devices disposed on the module. The conductive top layer may be segmented as to form one or more segments of the top layer that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated, top conductive layers correspond to different devices of the module. The top layer may be etched or cut to achieve such segmentation.

Abstract: Disclosed are devices and methods related to a conductive paint layer configured to provide radio-frequency (RF) shielding for a packaged semiconductor module. Such a module can include a packaging substrate, one or more RF components mounted on the packaging substrate, a ground plane disposed within the packaging substrate, and a plurality of RF-shielding wirebonds disposed on the packaging substrate and electrically connected to the ground plane. The module can further include an overmold structure formed over the packaging substrate and dimensioned to substantially encapsulate the RF component(s) and the RF-shielding wirebonds. The overmold structure can define an upper surface that exposes upper portions of the RF-shielding wirebonds. The module can further include a conductive paint layer having silver flakes disposed on the upper surface of the overmold structure so that the conductive paint layer, the RF-shielding wirebonds, and the ground plane form an RF-shield for the RF component(s).

Abstract: Disclosed are devices and methods related to radio-frequency (RF) shielding of RF modules. In some embodiments, tuned shielding can be achieved by utilizing different structures and/or arrangements of shielding-wirebonds to increase shielding in areas where needed, and to decrease shielding where not needed. Such tuning of shielding requirements can be obtained by measuring RF power levels at different locations of a module having a given design. Such tuned RF shielding configurations can improve the overall effectiveness of shielding, and can also be more cost effective to implement.

Abstract: A radio frequency (RF) module comprises RF-shielding structure for providing three-dimensional electromagnetic interference shielding with respect to one or more RF devices disposed on the module. The RF-shielding may comprise wirebond structures disposed adjacent to or surrounding an RF device. Two or more intramodule devices may have wirebond structures configured to at least partially block certain types of RF signals disposed between the devices, thereby reducing effects of cross-talk between the devices.

Abstract: A radio frequency (RF) module comprises an electrical reference, or ground, plane to which one or more RF devices disposed on the module are electrically coupled, and may be disposed beneath the RF devices. The reference plane may be segmented as to form one or more segments of the reference plane that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated reference planes, correspond to different devices of the module. The reference plane may be etched or cut to achieve such segmentation.

Abstract: A radio frequency (RF) module comprises a conductive top layer configured to improve RF interference-shielding functionality with respect to one or more RF devices disposed on the module. The conductive top layer may be segmented as to form one or more segments of the top layer that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated, top conductive layers correspond to different devices of the module. The top layer may be etched or cut to achieve such segmentation.

Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Disclosed are devices and methods related to radio-frequency (RF) shielding of RF modules. In some embodiments, tuned shielding can be achieved by utilizing different structures and/or arrangements of shielding-wirebonds to increase shielding in areas where needed, and to decrease shielding where not needed. Such tuning of shielding requirements can be obtained by measuring RF power levels at different locations of a module having a given design. Such tuned RF shielding configurations can improve the overall effectiveness of shielding, and can also be more cost effective to implement.

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: Aspects of the present disclosure relate to determining the location and/or density of vias that form part of an RF isolation structure of a packaged module and the resulting RF isolation structures. From electromagnetic interference (EMI) data, locations of where via density can be increased and/or decreased without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, one or more vias can be added and/or removed from a selected area of the packaged module based on the EMI data.

Abstract: Disclosed are apparatus and methods related to conformal coating of radio-frequency (RF) modules. In some embodiments, a module can include an overmold formed over an RF component mounted on a packaging substrate. The overmold can also cover a surface-mount device (SMD) such as an RF filter implemented as a chip size surface acoustic wave (SAW) device (CSSD). The module can further include a conductive layer formed over the overmold and configured to provide RF shielding functionality for the module. The conductive layer can be electrically connected to a ground plane of the packaging substrate through the SMD. An opening can be formed in the overmold over the SMD; and the conductive layer can conform to the opening to electrically connect the conductive layer with an upper surface of the SMD and thereby facilitate the grounding connection.

Abstract: A radio frequency (RF) module comprises a conductive top layer configured to improve RF interference-shielding functionality with respect to one or more RF devices disposed on the module. The conductive top layer may be segmented as to form one or more segments of the top layer that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated, top conductive layers correspond to different devices of the module. The top layer may be etched or cut to achieve such segmentation.

Abstract: A radio frequency (RF) module comprises RF-shielding structure for providing three-dimensional electromagnetic interference shielding with respect to one or more RF devices disposed on the module. The RF-shielding may comprise wirebond structures disposed adjacent to or surrounding an RF device. Two or more intramodule devices may have wirebond structures configured to at least partially block certain types of RF signals disposed between the devices, thereby reducing effects of cross-talk between the devices.

Abstract: A radio frequency (RF) module comprises an electrical reference, or ground, plane to which one or more RF devices disposed on the module are electrically coupled, and may be disposed beneath the RF devices. The reference plane may be segmented as to form one or more segments of the reference plane that are at least partially electrically isolated from surrounding segments or devices. A module may have a plurality of devices disposed thereon, wherein separate, at least partially isolated reference planes, correspond to different devices of the module. The reference plane may be etched or cut to achieve such segmentation.

Abstract: Disclosed are systems, devices and methods related to scanners that can be utilized for multiple electrical and/or magnetic field measurements at different locations of a radio-frequency (RF) module. In some embodiments, a scanning system can include a miniature probe such as a magnetic probe, a fixture system configured to hold a device under test (DUT) such as an RF module, an operating system configured to operate the DUT, and a measurement system configured to obtain field strength measurements through the miniature probe at different locations of the DUT. Such measurements can yield a near-field distribution over a plurality of selected areas of the DUT, with each of the selected areas being smaller than an overall lateral area of the DUT. In some implementations, such a scanning system can be utilized to facilitate applications such as electromagnetic (EM) shielding designs.