Abstract: A hand-held nozzle is attached to the end of a vacuum and fluid delivery hose of an upright deep cleaner. The nozzle includes a reservoir to contain a solution to be applied to a surface. When a solution delivery system of the deep cleaner is pressurized, water from the upright cleaner clean water tank is routed through the hose to the handheld nozzle. The water is routed through a venturi valve connected to the reservoir, which draws the solution to the valve to mix with the water stream. The resultant mixture flows from the hand-held nozzle for application to a surface being treated. One embodiment of the solution reservoir includes a retainer cap bonded to the reservoir and utilizing a bayonet-type mounting arrangement for mounting the reservoir to a nozzle assembly.

Abstract: An integrated circuit constructed to provide control functions to a toaster oven cooking appliance. Said control functions including compensation for input voltage fluctuations, compensation for residual heat due to recycling, audible signal generation, multiple mode selection, safety shut off and others. The integrated circuit also provides flexibility to accommodate multiple models of an appliance in a product line.

Abstract: An integrated circuit constructed to provide control functions to a toaster oven cooking appliance. The control functions including compensation for input voltage fluctuations, compensation for residual heat due to recycling, audible signal generation, multiple mode selection, safety shut off and others. The integrated circuit also provides flexibility to accommodate multiple models of an appliance in a product line.

Abstract: A trenched DMOS transistor has significantly reduced on-resistance. A lightly doped P tub is formed surrounding the P+ body region in order to enhance avalanche breakdown. Thus the epitaxial layer resistivity can be decreased to reduce device on-resistance, while the desired breakdown voltage is also achieved. The on-resistance is further reduced by adding a pre-initial oxidation implant, i.e. phosphorous for an N channel device or boron for a P channel device. This forms a more heavily doped JFET or pinch region at the bottom of the trench and in the upper portion of the drift region. This N JFET region (which is P doped for a P channel device) is more heavily doped than the underlying epitaxial layer and surrounds the trench bottom, thus reducing on-resistance by increasing local doping concentration where otherwise a parasitic JFET would be present.

Abstract: In a toaster, a system is constructed to vary the duration of the toasting cycle. An RC network provides an oscillating signal to a counter, which upon the required number of oscillations being counted, triggers a transistor switch. The switch energizes the main solenoid switch which in turn deactivates the heating elements of the toaster. The RC network of the system comprises a variable resistor which may be manually operated, a heat sensitive resistor, and a light sensitive resistor.