Patents by Inventor Hobin Chen

Hobin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and manufacturing method thereof
    Patent number: 9559190
    Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: January 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chien-Hung Chen, Shen-Chieh Liu, Hobin Chen, Wen-Lang Wu, Cherng-Chang Tsuei
  • Semiconductor device and method of manufacture
    Patent number: 9263337
    Abstract: A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number of defects that occur to the substrate and other structures during the etching process.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: February 16, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Li Chou, Shao-Yen Ku, Chi-Yun Tseng, Yu-Yen Hsu, Tsai-Pao Su, Hobin Chen, Sheng-Chi Shih
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150364581
    Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.
    Type: Application
    Filed: August 25, 2015
    Publication date: December 17, 2015
    Inventors: CHIEN-HUNG CHEN, SHEN-CHIEH LIU, HOBIN CHEN, WEN-LANG WU, CHERNG-CHANG TSUEI
  • Semiconductor structure and manufacturing method thereof
    Patent number: 9147767
    Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: September 29, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chien-Hung Chen, Shen-Chieh Liu, Hobin Chen, Wen-Lang Wu, Cherng-Chang Tsuei
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150228793
    Abstract: A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The semiconductor structure further includes a dielectric material over the metallic filling layer and separating the metallic filling layer from a conductive trace. The conductive trace is over the dielectric material. The semiconductor structure further includes a conductive plug extending longitudinally through the dielectric material and ending with a lateral encroachment inside the metallic filling layer along a direction. The lateral direction is substantially perpendicular to the longitudinal direction of the conductive plug.
    Type: Application
    Filed: February 7, 2014
    Publication date: August 13, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: CHIEN-HUNG CHEN, SHEN-CHIEH LIU, HOBIN CHEN, WEN-LANG WU, CHERNG-CHANG TSUEI
  • Semiconductor Device and Method of Manufacture
    Publication number: 20130109140
    Abstract: A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number of defects that occur to the substrate and other structures during the etching process.
    Type: Application
    Filed: March 8, 2012
    Publication date: May 2, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Li Chou, Shao-Yen Ku, Chi-Yun Tseng, Yu-Yen Hsu, Tsai-Pao Su, Hobin Chen, Sheng-Chi Shih