Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies are provided.

Abstract: The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one particular implementation, a microelectronic component assembly includes a microelectronic component, at least two leads, and at least two bond wires. Each of the leads may have a reduced-thickness inner length adjacent terminals of the microelectronic component and a body having an outer surface spaced farther from the microelectronic component than a bond surface of the inner length. Each of the bond wires couples the microelectronic component to one of the leads and has a maximum height outwardly from the microelectronic component that is no greater than the height of the outer surface of the lead.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabrication are provided. In various embodiments, the die assembly comprises a first die mounted on a substrate and a second die mounted on the first die. In one embodiment, the second die has a recessed edge along the perimeter of the bottom surface to provide clearance for a bonding element extending from bond pads on the first die to pads on the substrate, thus eliminating the need for a spacer between the two dies. In another embodiment, the second die is at least partially disposed within a recess in the upper surface of the first die. In another embodiment, an adhesive element is disposed within a recess in the bottom surface of the first die for attaching the first die to the substrate. In yet another embodiment, the first die is at least partially disposed within a recess within the bottom surface of the second die. The stacked die assemblies can be encapsulated to form semiconductor packages.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabrication are provided. In various embodiments, the die assembly comprises a first die mounted on a substrate and a second die mounted on the first die. In one embodiment, the second die has a recessed edge along the perimeter of the bottom surface to provide clearance for a bonding element extending from bond pads on the first die to pads on the substrate, thus eliminating the need for a spacer between the two dies. In another embodiment, the second die is at least partially disposed within a recess in the upper surface of the first die. In another embodiment, an adhesive element is disposed within a recess in the bottom surface of the first die for attaching the first die to the substrate. In yet another embodiment, the first die is at least partially disposed within a recess within the bottom surface of the second die. The stacked die assemblies can be encapsulated to form semiconductor packages.

Abstract: Semiconductor devices and stacked die assemblies, are provided which have at least two semiconductor dies disposed on a substrate in a stacked arrangement, the first and second dies having first surfaces having bond pads, the second die having a second surface with a recessed edge portion along a perimeter of that die, and the recessed edge portion having a height sufficient for clearance of bonding elements extending from the first die.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies are provided. In an embodiment of the methods, a second die is mounted on a first die which is at least partially received within a recess of the second die and an overall height of the dies within the device is less than a combined height of the dies.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: An apparatus and method for detecting characteristics of a microelectronic substrate. The microelectronic substrate can have a first surface with first topographical features, such as roughness elements, and a second surface facing opposite from the first surface and having second topographical features, such as protruding conductive structures. In one embodiment, the apparatus can include a support member configured to carry the microelectronic substrate with a first portion of the first surface exposed and a second portion of the second surface exposed. The apparatus can further include a topographical feature detector positioned proximate to support member and aligned with the first portion of the first surface of the microelectronic substrate to detect characteristics, such as a roughness, of the first surface while the microelectronic substrate is carried by the support member.

Abstract: An apparatus and method for detecting characteristics of a microelectronic substrate. The microelectronic substrate can have a first surface with first topographical features, such as roughness elements, and a second surface facing opposite from the first surface and having second topographical features, such as protruding conductive structures. In one embodiment, the apparatus can include a support member configured to carry the microelectronic substrate with a first portion of the first surface exposed and a second portion of the second surface exposed. The apparatus can further include a topographical feature detector positioned proximate to support member and aligned with the first portion of the first surface of the microelectronic substrate to detect characteristics, such as a roughness, of the first surface while the microelectronic substrate is carried by the support member.

Abstract: An apparatus and method for detecting characteristics of a microelectronic substrate. The microelectronic substrate can have a first surface with first topographical features, such as roughness elements, and a second surface facing opposite from the first surface and having second topographical features, such as protruding conductive structures. In one embodiment, the apparatus can include a support member configured to carry the microelectronic substrate with a first portion of the first surface exposed and a second portion of the second surface exposed. The apparatus can further include a topographical feature detector positioned proximate to support member and aligned with the first portion of the first surface of the microelectronic substrate to detect characteristics, such as a roughness, of the first surface while the microelectronic substrate is carried by the support member.

Abstract: An apparatus and method for detecting characteristics of a microelectronic substrate. The microelectronic substrate can have a first surface with first topographical features, such as roughness elements, and a second surface facing opposite from the first surface and having second topographical features, such as protruding conductive structures. In one embodiment, the apparatus can include a support member configured to carry the microelectronic substrate with a first portion of the first surface exposed and a second portion of the second surface exposed. The apparatus can further include a topographical feature detector positioned proximate to support member and aligned with the first portion of the first surface of the microelectronic substrate to detect characteristics, such as a roughness, of the first surface while the microelectronic substrate is carried by the support member.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.