Abstract: A memory device includes a first conductive line, a second conductive line, and a memory cell disposed between the first and second conductive lines. The memory cell includes a lower electrode layer, a switching pattern, and an upper electrode layer. The switching pattern includes a main region including a pair of first side walls and a pair of second walls, and a corner region at four corners of the main region. The switching pattern includes a chalcogenide layer including a Group VI chalcogen element, an element of Group IV and an element of Group V, and the concentration of the Group IV element in the corner region is greater than that of the Group IV element in the main region, or the concentration of the Group V element in the corner region is greater than that of the Group V element in the main region.

Abstract: A semiconductor device includes first and second conductive lines respectively extending in first and second directions on a substrate. Cell structures are respectively between the first and second conductive lines and include first and second electrodes and a selector layer. First capping layers cover side surfaces of the first conductive lines and first side surfaces of the cell structures in the second direction. First interlayer insulating layers fill spaces between the first conductive lines and between the cell structures in the second direction and contact the first capping layers. Second capping layers cover second side surfaces of the cell structures in the first direction and side surfaces of the second conductive lines. Second interlayer insulating layers fill spaces between the cell structures and between the second conductive lines in the first direction and contact the second capping layers. The first and second interlayer insulating layers have different carbon contents.

Abstract: A semiconductor device includes a stack structure that includes horizontal conductive layers and interlayer insulating layers that are alternately stacked with each other in a first direction, vertical conductive layers that pass through the stack structure and extend in the first direction, where the vertical conductive layers have a pillar shape, selector layers that surround external surfaces of the vertical conductive layers, where the selector layers include a chalcogenide material, and first isolation layers that divide the horizontal conductive layers from each other and pass through the stack structure and between the vertical conductive layers adjacent to each other in a second direction that is perpendicular to the first direction. Ends of the first isolation layers in the second direction are in contact with external surfaces of the selector layers.