Patents by Inventor Hodaka ICHIKAWA

Hodaka ICHIKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20220310795
    Abstract: A method for manufacturing a silicon carbide epitaxial substrate which has a first surface which is a (000-1) C-face, a silicon carbide epitaxial layer located on the first surface of the silicon carbide substrate, and a line-shaped surface defect density on a top surface of the silicon carbide epitaxial layer is less than 1.0 cm?2 and a stacking fault density is less than 1.2 cm?2.
    Type: Application
    Filed: March 4, 2022
    Publication date: September 29, 2022
    Inventors: Tsuyoshi MIURA, Hodaka ICHIKAWA, Naoya KIMURA, Hiroyuki OKUDA, Taisuke HIROOKA