Abstract: Disclosed is an image sensor including a first sub-pixel array including a plurality of first pixel groups, which are respectively coupled to a plurality of first readout lines extending in a first direction and are adjacent to one another in a second direction intersecting the first direction; and a plurality of first switches suitable for selectively coupling a plurality of first floating diffusion nodes included in the plurality of first pixel groups, based on a plurality of first control signals.

Abstract: Disclosed is an image sensing device and an operating method thereof, the image sensing device including an image sensor suitable for generating first image signals, corresponding to some of a plurality of pixels, in a binning mode, and an image processor suitable for generating second image signals, corresponding to other pixels, by performing an interpolation operation based on the first image signals in the binning mode.

Abstract: An image sensor for stably generating pulses of a precharge signal is disclosed. The image sensor includes a divider configured to generate a plurality of divided clock signals by dividing one or ore input clock signal, a precharge pulse generator configured to generate a first pulse signal by selecting any one of the plurality of divided clock signals in response to decoding signals of a first group, and generate a second pulse signal by selecting any one of the plurality of divided clock signals in response to decoding signals of a second group, and a precharge signal generator configured to generate a precharge signal by combining the first pulse signal and the second pulse signal.

Abstract: Disclosed is an image sensing device and an operating method thereof, the image sensing device including an image sensor suitable for generating first image signals, corresponding to some of a plurality of pixels, in a binning mode, and an image processor suitable for generating second image signals, corresponding to other pixels, by performing an interpolation operation based on the first image signals in the binning mode.

Abstract: Provided are devices having a device including a ramp signal generator which may comprise: a slope control circuit configured to generate a controllable analog reference voltage according to a digital setting code value to control a slope of a ramp signal; and at least one unit current cell configured to adjust the slope of the ramp signal by adjusting a current flowing through the at least one unit current cell according to the controllable analog reference voltage generated by the slope control circuit.

Abstract: An image sensor for stably generating pulses of a precharge signal is disclosed. The image sensor includes a divider configured to generate a plurality of divided clock signals by dividing one or ore input clock signal, a precharge pulse generator configured to generate a first pulse signal by selecting any one of the plurality of divided clock signals in response to decoding signals of a first group, and generate a second pulse signal by selecting any one of the plurality of divided clock signals in response to decoding signals of a second group, and a precharge signal generator configured to generate a precharge signal by combining the first pulse signal and the second pulse signal.

Abstract: Provided are devices having a ramp signal generator for adjusting a slope of a ramp signal by adjusting a current of a unit current circuit to adjust a step size. The ramp signal generator may include a unit current circuit including one or more current paths that allow a flow of an electrical current generated based on a ramp supply voltage, and a slope adjustment circuit configured to adjust a slope of a ramp signal by changing a current path of the electrical current flowing through the one or more current paths of the unit current circuit.

Abstract: A comparison device includes a comparison circuit including input ports to receive a pixel signal and a ramp signal, respectively, and structured to compare the pixel signal and the ramp signal to output a comparison signal; a sensing circuit coupled to the comparison circuit and structured to sense a common voltage variation amount from the comparison circuit, wherein the common voltage variation amount depends on the pixel signal such that the common voltage variation amount increases as the pixel signal increases; and a tail current control circuit coupled to the sensing circuit and structured to control a tail current amount of the comparison circuit based on the common voltage variation amount.

Abstract: A data readout apparatus may include a comparison circuit structured to compare a pixel signal with the ramp signal to generate a comparison result, a counter array structured to receive the comparison results to count up with each clock pulse from a first timing until a second timing to convert a counted number of clock pulses into differential data and output the differential data through differential data lines, and a sense amplifier array structured to receive the differential data to sense and amplify the differential data based on a judge clock. The sense amplifier array can include a replica delay structured to delay the judge clock and the precharge pulse signal based on a read out timing and read out the data from the counter array at the read out timing.

Abstract: A data readout apparatus may include a comparison circuit structured to compare a pixel signal with the ramp signal to generate a comparison result, a counter array structured to receive the comparison results to count up with each clock pulse from a first timing until a second timing to convert a counted number of clock pulses into differential data and output the differential data through differential data lines, and a sense amplifier array structured to receive the differential data to sense and amplify the differential data based on a judge clock. The sense amplifier array can include a replica delay structured to delay the judge clock and the precharge pulse signal based on a read out timing and read out the data from the counter array at the read out timing.

Abstract: Provided are devices having a ramp signal generator for adjusting a slope of a ramp signal by adjusting a current of a unit current circuit to adjust a step size. The ramp signal generator may include a unit current circuit including one or more current paths that allow a flow of an electrical current generated based on a ramp supply voltage, and a slope adjustment circuit configured to adjust a slope of a ramp signal by changing a current path of the electrical current flowing through the one or more current paths of the unit current circuit.

Abstract: Provided are devices having a device including a ramp signal generator which may comprise: a slope control circuit configured to generate a controllable analog reference voltage according to a digital setting code value to control a slope of a ramp signal; and at least one unit current cell configured to adjust the slope of the ramp signal by adjusting a current flowing through the at least one unit current cell according to the controllable analog reference voltage generated by the slope control circuit.

Abstract: A nonvolatile memory device includes a nonvolatile memory cell, a sensing circuit coupled between a sensing input line coupled to a bit line of the nonvolatile memory cell and a sensing output line, a sensing output grounding portion fixing an output signal of the sensing circuit at a low level if the output signal of the sensing circuit has a low level, and a bit line grounding portion fixing a bit line voltage at a ground voltage if the output signal of the sensing circuit is fixed at a low level.

Abstract: A comparison device includes a comparison circuit including input ports to receive a pixel signal and a ramp signal, respectively, and structured to compare the pixel signal and the ramp signal to output a comparison signal; a sensing circuit coupled to the comparison circuit and structured to sense a common voltage variation amount from the comparison circuit, wherein the common voltage variation amount depends on the pixel signal such that the common voltage variation amount increases as the pixel signal increases; and a tail current control circuit coupled to the sensing circuit and structured to control a tail current amount of the comparison circuit based on the common voltage variation amount.

Abstract: A precharge circuit includes a precharge block suitable for precharging a positive bit line and a negative bit line; and a precharge level adjusting block suitable for adjusting a precharge level of the precharge block using a threshold voltage value of a transistor.

Abstract: A nonvolatile memory device includes a nonvolatile memory cell and a variable resistive load portion. The variable resistive load portion is coupled between a bit line of the nonvolatile memory cell and a supply voltage line. The variable resistive load portion is suitable for changing a resistance value between the bit line and the supply voltage line according to a level of a supply voltage applied to the supply voltage line.

Abstract: A nonvolatile memory device includes a nonvolatile memory cell, a sensing circuit coupled between a sensing input line coupled to a bit line of the nonvolatile memory cell and a sensing output line, a sensing output grounding portion fixing an output signal of the sensing circuit at a low level if the output signal of the sensing circuit has a low level, and a bit line grounding portion fixing a bit line voltage at a ground voltage if the output signal of the sensing circuit is fixed at a low level.

Abstract: A nonvolatile memory device includes a nonvolatile memory cell and a variable resistive load portion. The variable resistive load portion is coupled between a bit line of the nonvolatile memory cell and a supply voltage line. The variable resistive load portion is suitable for changing a resistance value between the bit line and the supply voltage line according to a level of a supply voltage applied to the supply voltage line.

Abstract: A nonvolatile memory device includes a nonvolatile memory cell coupled to a bit line. The nonvolatile memory device may include a sensing circuit configured to output a sensing output signal for sensing a status of the nonvolatile memory cell based on a sensing input signal inputted to the sensing circuit through a sensing input line. The nonvolatile memory device may include a folding circuit coupled to the bit line to output the sensing input signal having a voltage low level or a voltage high level according to a voltage level of the bit line.

Abstract: A nonvolatile memory device may include a nonvolatile memory cell and a sensing circuit. The sensing circuit is coupled to a bit line of the nonvolatile memory cell. The sensing circuit may be realized using an inverter comprised of a P-channel transistor coupled to a supply voltage line and an N-channel transistor coupled to a ground voltage. The gate of the P-channel transistor is coupled to the ground voltage.