Patents by Inventor Hoe-sik Chung
Hoe-sik Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7372150Abstract: A semiconductor wafer including an identification indication is provided. The wafer includes a convex edge with an upper surface area and a lower surface area. The identification indication is in a marking region which is disposed on a lower side surface of the convex edge. The lower side surface has a wide region where the marking region is located. This wide region has a width that is wider than an upper side surface of the wafer and thus makes a cross-section of a side of the wafer asymmetrical. With the present invention, the entire top surface of the semiconductor wafer can be utilized for a semiconductor chip region and prevents manufacturing problems associated with the uneven nature of the identification indication when the identification is located on the top surface of the wafer.Type: GrantFiled: October 10, 2003Date of Patent: May 13, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Sam-Jong Choi, Gi-Jung Kim, Kyoo-Chul Cho, Yeon-Sook Kim, Shin-Hyeok Han, Hoe-Sik Chung
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Patent number: 6838223Abstract: A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed.Type: GrantFiled: February 12, 2003Date of Patent: January 4, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-woong Yoon, Hoe-sik Chung, Jin-a Ryu, Young-ho Kim
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Publication number: 20040124502Abstract: A semiconductor wafer including an identification indication is provided. The wafer includes a convex edge with an upper surface area and a lower surface area. The identification indication is in a marking region which is disposed on a lower side surface of the convex edge. The lower side surface has a wide region where the marking region is located. This wide region has a width that is wider than an upper side surface of the wafer and thus makes a cross-section of a side of the wafer asymmetrical. With the present invention, the entire top surface of the semiconductor wafer can be utilized for a semiconductor chip region and prevents manufacturing problems associated with the uneven nature of the identification indication when the identification is located on the top surface of the wafer.Type: ApplicationFiled: October 10, 2003Publication date: July 1, 2004Applicant: Samsung Electronics Co., Ltd.Inventors: Sam-Jong Choi, Gi-Jung Kim, Kyoo-Chul Cho, Yeon-Sook Kim, Shin-Hyeok Han, Hoe-Sik Chung
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Patent number: 6682876Abstract: A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.Type: GrantFiled: March 5, 2003Date of Patent: January 27, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Hyun Ahn, Sang-Mun Chon, Hoe-Sik Chung, Mi-Sook Jeon, Eun-Mi Bae, Baik-Soon Choi, Ok-Seok Jang, Young-Cheul Lim
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Publication number: 20030162120Abstract: A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed.Type: ApplicationFiled: February 12, 2003Publication date: August 28, 2003Inventors: Sang-Woong Yoon, Hoe-Sik Chung, Jin-A Ryu, Young-Ho Kim
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Publication number: 20030157441Abstract: A thinner composition is effective in removing a variety of photoresists, and includes propylene glycol mono-methyl ether acetate, ethyl 3-ethoxy propionate and at least one of &ggr;-butyro lactone and propylene glycol mono-methyl ether. The thinner composition can selectively strip a photoresist coated on a backside and at an edge portion of a substrate, as well as a photoresist coated on a whole front surface of the substrate.Type: ApplicationFiled: March 5, 2003Publication date: August 21, 2003Inventors: Seung-Hyun Ahn, Sang-Mun Chon, Hoe-Sik Chung, Mi-Sook Jeon, Eun-Mi Bae, Baik-Soon Choi, Ok-Seok Jang, Young-Cheul Lim
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Patent number: 6589719Abstract: A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).Type: GrantFiled: April 5, 2002Date of Patent: July 8, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Hyun Ahn, Sang-Mun Chon, Hoe-Sik Chung, Mi-Sook Jeon, Eun-Mi Bae, Baik-Soon Choi, Ok-Seok Jang
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Publication number: 20030113673Abstract: A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).Type: ApplicationFiled: April 5, 2002Publication date: June 19, 2003Inventors: Seung-Hyun Ahn, Sang-Mun Chon, Hoe-Sik Chung, Mi-Sook Jeon, Eun-Mi Bae, Baik-Soon Choi, Ok-Seok Jang
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Patent number: 6503682Abstract: A positive photoresist composition having improved sensitivity and resolution, a method of making the composition, and a method for forming a pattern during semiconductor processing using the composition are disclosed. The photoresist composition includes: (i) a photosensitive material obtained by mixing a first photosensitive compound represented by formula (1) and a second photosensitive compound represented by formulae (2a) or (2b); (ii) a resin; and (iii) a solvent. The invention enables the formation of patterns with an exceptional profile due to a high degree of sensitivity and resolution of the photoresist composition.Type: GrantFiled: March 30, 2000Date of Patent: January 7, 2003Assignee: Samsung Electronics Co., Ltd.Inventors: Young Ho Kim, Hoe Sik Chung, Sang Mun Chon, Boo Sup Lee
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Patent number: 6398430Abstract: A semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking and flow baking unit for cross-linking the photoresist pattern and subsequently flow baking the cross-linked photoresist pattern, wherein the cross-linking and flow baking unit thermally stabilizes the photoresist pattern prior to flow baking.Type: GrantFiled: August 8, 2000Date of Patent: June 4, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Gyu-chan Jeoung, Kwang-seok Choi, Jin-hang Jung, Young-sun Kim, Hong Lee, Hoe-sik Chung, Sung-ho Lee, Hun-hwan Ha
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Patent number: 6358672Abstract: There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.Type: GrantFiled: November 16, 1998Date of Patent: March 19, 2002Assignee: Samsung Electronics Co., Ltd.Inventors: Gyu-chan Jeoung, Kwang-seok Choi, Jin-hang Jung, Young-sun Kim, Hong Lee, Hoe-sik Chung, Sung-ho Lee, Hun-hwan Ha
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Publication number: 20010053500Abstract: There are provided a semiconductor device fabrication system for carrying out a UV-bake on a photoresist pattern in the semiconductor device pattern formation, a method of forming a semiconductor device pattern using the same, and a photoresist formed thereby. The semiconductor device fabrication system includes a photoresist coating unit coating a wafer with a specific photoresist; a developing unit forming a photoresist pattern on the wafer coated with the photoresist; and a cross-linking unit cross-linking the photoresist pattern to provide a stabilized flow during the flow process for the photoresist pattern. The method of forming a semiconductor device pattern includes: coating a wafer with a photoresist; aligning a photo mask on the photoresist, and carrying out an exposure; forming a photoresist pattern on the wafer; carrying out a cross-linking of the photoresist pattern; and carrying out a flow bake for the photoresist pattern after the cross-linking.Type: ApplicationFiled: November 16, 1998Publication date: December 20, 2001Inventors: GYU-CHAN JEOUNG, KWANG-SEOK CHOI, JIN-HANG JUNG, YOUNG-SUN KIM, HONG LEE, HOE-SIK CHUNG, SUNG-HO LEE, HUN-HWAN HA
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Patent number: 6074944Abstract: Methods of treating surfaces of wafers to be used in forming integrated circuit devices comprise applying dihydropyrane to the surfaces of the wafers wherein hydrophobicity is imparted to the surfaces. The applying steps are carried out prior to applying photoresists to the wafers.Type: GrantFiled: January 5, 1998Date of Patent: June 13, 2000Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-hang Jung, Hoe-sik Chung
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Patent number: 5848315Abstract: A development monitoring apparatus in which a non-exposed wafer is easily reworked by monitoring a developed portion and an undeveloped portion of a photoresist film on a wafer. The apparatus includes a light source for outputting incident light to a wafer having a photoresist film coated with a developer, and a light collector for collecting reflected light reflecting from the wafer. A filter transmits only the reflected light having a desired wavelength. A photoelectric device transforms the reflected light which passes through the filter into an electrical signal. Correct development of the photoresist film is determined by measuring the intensity change of the electrical signal over time. Accordingly, an exposed wafer and an non-exposed wafer are rapidly reworked, so that an increase in manufacturing costs and deterioration of yield rate can be prevented.Type: GrantFiled: November 12, 1996Date of Patent: December 8, 1998Assignee: Samsung Electronics Co., Ltd.Inventors: Yeong-seon Kim, Min-gyu Ko, Hoe-sik Chung, Hong Lee