Abstract: Provided is a Raman scattering measurement apparatus including a light source which emits light to smoke particles, a filter configured to block light which is incident to the smoke particles and passes through the particle and to allow Raman scattered light to pass therethrough, and a photodetector which detects the Raman scattered light passing through the filter in order to distinguish fire smoke generated due to a true fire from non-fire smoke generated due to daily life or industrial activity. The present invention also provides a fire determination apparatus including a unit which reads a Raman shift from Raman scattered light detected by the photodetector of the Raman scattering measurement apparatus, estimates a smoke component from the read Raman shift, and determines fire/non-fire from the estimated smoke component and a method thereof.

Abstract: Provided is a III nitride semiconductor device higher heat dissipation performance, and a method of manufacturing a III nitride semiconductor device which makes it possible to fabricate such a III nitride semiconductor device at higher yield. In a method of a III nitride semiconductor device, a semiconductor structure obtained by sequentially stacking an n-layer, an active layer, and a p-layer is formed on a growth substrate; a support body including a first support electrically connected to an n-layer to serve as an n-side electrode, a second support electrically connected to a p-layer to serve as a p-side electrode, and structures made of an insulator for insulation between first and second supports is formed on the p-layer side of the semiconductor structure; and the growth substrate is separated using a lift-off process. The first support and the second support are grown by plating.