Abstract: Disclosed are an apparatus and system for evaluating a welding condition on the basis of three-dimensional data. An aspect of the present embodiment provides an apparatus for evaluating a welding condition, the apparatus including a communication unit configured to receive a three-dimensional image for an evaluation target from the outside, a base material recognition unit configured to recognize a base material from the three-dimensional image for the evaluation target by using a point cloud, a bead extraction unit configured to extract a welding bead welded between the base materials, a bead cross-section acquisition unit configured to acquire cross-sections at preset intervals for the extracted welding bead, and a profile analysis unit configured to analyze a profile of the welding bead for the cross-section acquired by the bead cross-section acquisition unit.

Abstract: A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.

Abstract: A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.