Abstract: The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

Abstract: The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

Abstract: A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT.

Abstract: The invention provides a method for controlling the grey-scale modulation of a reflective bistable cholesteric display by applying selected sequences of high and low pulses to modulate the cholesteric domain size and helical axis orientation. Non-mesogenic dopants may also be added to reduce the drive voltage.

Abstract: A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light.

Abstract: The present invention provides a diarylaminofluorene chromophore compound having the following structure: wherein: M is a metal atom of Ir, Pt; R is H, CH3, OCH3, or F; A is none or six-member carbocyclic aromatic ring system; 0?m?3 0?n?1. The invention also provides high-efficiency organic light-emitting devices fabricated using these compounds.

Abstract: We disclose a new method of preparing liquid crystal alignment layers that can produce controllable pretilt angles from near 0 to near 90°. It is based on the stacking of two alignment materials sequentially, with the first one being continuous and the second one being discontinuous leaving part of the first layer exposed.

Abstract: A class of luminescent gold(III) compounds with a tridentate ligand and at least one strong ?-donating group having the chemical structure represented by the general formula (I): wherein R1-R4 each independently represent the group containing hydrogen, halogen, alkynyl, substituted alkynyl, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, substituted heteroaryl, alkoxyl, substituted alkoxyl, amino, substituted amino, cyano, nitro, alkylcarbonyl, alkoxycarbonyl, arylcarbonyl, aryloxycarbonyl, mono- or dialkylaminocarbonyl, alkylcarbonyloxy, arylcarbonyloxy, aryloxy, alkoxycarbonyl, aryloxycarbonyloxy group, and the like; X, Y and Z each independently represent a heteroatom or a carbon; represents an aromatic or heterocyclic 5- or 6-membered ring; ? and ? each independently represent a bridge for an aromatic or heterocyclic 5- or 6-membered ring or represent a break for non-cyclic moiety; C—X, C—Y and C—Z each independently represent a single bond or double bond; n represents a zero or an i

Abstract: This invention provides a bistable liquid crystal device. The bistable liquid crystal device includes a first substrate having thereon a first conductive layer and a first alignment layer; a second substrate having thereon a second conductive layer and a second alignment layer; and a liquid crystal layer sandwiched between the first and second alignment layers. The first alignment layer induces a first pretilt angle ?1 in the range of 20°-65° between the liquid crystal layer in contact with the first alignment layer. The second alignment layer induces a second pretilt angle ?2 in the range of 20°-65° between the liquid crystal layer in contact with the second alignment layer. The liquid crystal layer is capable of maintaining a stable bend state or a stable splay state at zero bias voltage and is switchable between the stable bend state and the stable splay state when a switching energy is applied in operation to the liquid crystal layer.

Abstract: The invention provides a bistable twisted nematic liquid crystal display, comprising a first substrate having thereon a first conductive layer and a first alignment layer; a second substrate having thereon a second conductive layer and a second alignment layer; a liquid crystal layer in the first and second alignment layers; an alignment layer on each of the substrates, the alignment layer imparting a preferred direction for liquid crystal molecules near the alignment layer, and possessing different azimuthal and polar anchoring energies when used to align a liquid crystal layer: the alignment layers being rubbed in such a way to give a stable twist angle of the liquid crystal of ? where ? can be any value in between ?45° to +45°; and wherein the d/p ratio of the liquid crystal layer is between the values of 0.15+0.5?/? and 0.35+0.5?/?.

Abstract: Pixels of an LCD are divided into two sub-pixels, one for a reflective mode and one for a transmittive mode. The cell gaps of both sub-pixels are the same, improving fabrication ease. A novel photoalignment technique is used together with a shadow mask in an embodiment of the invention. Double exposure of the alignment layer with different orientations produces different alignment directions, thereby achieving the different LCD modes for the sub-pixels.

Abstract: Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

Abstract: Methods and systems for displaying videos with high contrast using fast transient response of liquid crystal materials are disclosed. The system comprises a liquid crystal material treated with a chiral dopant, which is aligned between two substrates with conductive layer on each substrate. The system can be operated in an active or passive matrix mode display. The active matrix display can be a thin film transistor (TFT) or MOS transistor, whereas no transistors are used for the passive matrix mode display. A full color display, with high contrast, can be achieved by illuminating the transient liquid crystal material with a pulsed backlight.

Abstract: The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region (108b, 108c, 108d) of the TFTs as well as the pixel-electrode (108e) are formed conjointly in a single poly-Si layer.

Abstract: The present invention provides a method of an active-matrix thin film transistor array, comprising of two levels of metallic interconnections formed from one layer of metallic conductor; and thin-film transistors with source, drain and gate electrodes either fully or partially replaced with metal, and wherein the pixel electrodes are polycrystalline silicon.

Abstract: An organic light emitting diode consisting of multiple organic layers, disposed between a transparent conducting anode and metallic cathode. The anode is provided with a metal fluoride layer to enhance the overall performance of the device, including higher power efficiency, lower voltage threshold and improved device operation stability.

Abstract: This invention relates to methods for preparing photo-patterned mono- or polychromatic, polarizing films. The polarizer can be pixelated into a number of small regions wherein some of the regions have one orientation of the principal neutral or color absorbing axis; and some other of the said regions have another orientation of the principal neutral or color absorbing axis. The axis orientation is determined by the polarization vector of actinic radiation and the multi-axes orientation is possible by a separated masked exposure. This polarizer can be placed on the interior substrate surface of the LCD cell.

Abstract: The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.

Abstract: The present invention provides a diarylaminofluorene chromophore compound having the following structure: wherein: M is a metal atom of Ir, Pt; R is H or any substituent such as CH3, OCH3, F; A is none or six-member aromatic ring system; m is at least 1; n is at least zero. The invention also provides high-efficiency organic light-emitting devices fabricated using these compounds.

Abstract: An azo compound of the present invention is represented by the general formula (1): (wherein, R1 and R2 each independently represents a hydroxy group, or a polymerizable functional group selected from the group consisting of a (meth)acryloyl group, a (meth)acryloyloxy group, a (meth)acrylamide group, a vinyl group, a vinyloxy group, and a maleimide group; X1 represents single bond when R1 is a hydroxy group and represents a linking group represented by -(A1-B1)m- when R1 is a polymerizable functional group; X2 represents a single bond when R2 is a hydroxy group and represents a linking group represented by -(A2-B2)n- when R2 is a polymerizable functional group; R3 and R4 each independently represents —OR7, a hydroxyalkyl group having 1 to 4 carbon atoms, or —CONR8R9; and R5 and R6 each independently represents a carboxy group, a sulfo group, a nitro group, amino group, or a hydroxy group).