Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

Abstract: A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.

Abstract: Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.

Abstract: A device includes a light-emitting diode (LED) integrated with a photodetector on the same semiconductor platform, such that the photocurrent generated by the photodetector can be used to monitor the optical output of the LED, which is located adjacent to the photodetector. The device provides a compact, robust, reliable and low-cost way of monitoring LED emission.

Abstract: Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.

Abstract: A nano-LED containing an array of nano-pillars of different diameters that are distributed over an emission area of an LED chip is capable of emitting broadband and white or nearly white light. Since each pillar emits light at a different wavelength according to its diameter and strain state, the overall emission spectral characteristics of the device is a combination of individual spectrum, giving rise to broadband emission. The spectral shape can be tailored for different shades of white emission, by controlling the distribution of the different diameter nano-pillars. The nano-pillars are patterned by nanosphere lithography.

Abstract: A nano-LED containing an array of nano-pillars of different diameters that are distributed over an emission area of an LED chip is capable of emitting broadband and white or nearly white light. Since each pillar emits light at a different wavelength according to its diameter and strain state, the overall emission spectral characteristics of the device is a combination of individual spectrum, giving rise to broadband emission. The spectral shape can be tailored for different shades of white emission, by controlling the distribution of the different diameter nano-pillars. The nano-pillars are patterned by nanosphere lithography.

Abstract: Methods and systems are provided to utilize and manufacture a stacked chip assembly. Microelectronic or optoelectronic chips of any dimensions are directly stacked onto each other. The chips can be of substantially identical sizes. To enable forming the stacked chip assembly, trenches are laser micro-machined onto the bottom surface of a chip to accommodate the bond wedge/ball and wire path of the chip beneath it. Consequently, chips can be tightly integrated without a gap and without having to reserve space for the bond wedges/balls.

Abstract: Methods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.

Abstract: Methods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.

Abstract: An array of light emitting devices, each device comprising a sloped wall mesa (24) of luminescent semiconductor material. Extending over the sloped wall mesas (24) is a metal contact (30). The array can be arranged as a parallel addressable system so that all devices (24) can be stimulated to emit light simultaneously. Alternatively, the array can be arranged as a matrix addressable array, in which case individual devices can be selectively stimulated.

Abstract: A vertical-cavity device comprises: (a) a chip comprising an active semiconductor layer for providing optical gain; (b) a first mirror arranged on a first side of the active layer; (c) a second mirror arranged on a second side of the active layer, opposite to the first mirror, and forming with at least the first mirror an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer; (d) a heatspreader for removing heat from the active layer, the heatspreader being arranged inside the cavity and having a first surface adjacent to the chip and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in an operating bandwidth of the device. In addition to removing heat from the active layer, the heatspreader also has one or more further selected property that has a further selected effect on light output from the device.

Abstract: A light emitting diode comprising of a fluorescent microsphere coating is proposed. The coating consists of fluorescent microspheres which fluoresce at green and red wavelengths, excited by a shorter wavelength LED. Due to the micron-scale dimension of the spheres, they are non-resolvable to the human eye and the overall optical output appears as color mixed. By varying the proportions of green and red fluorescent microspheres and the wavelength of the excitation source, the color of the optical output can be tuned. If the optical output has of blue, green and red components in the correct proportions, white color emission can be achieved. The light emitting diode can be sectioned into multiple individually-addressable regions. Each section can emit at a different wavelength according to the type of fluorescent microspheres coated. By varying the intensity of the blue, green and red regions by changing the bias voltage, the output wavelength (color) can be continuously tuned (varied).