Abstract: Disclosed are a display apparatus and a method for manufacturing the same. The display apparatus comprises: a multi-buffer layer; a pixel array layer formed on the multi-buffer layer and including a plurality of pixels respectively formed as the intersections of a plurality of gate lines and a plurality of data lines; an encapsulation layer formed on the pixel array layer; and an encapsulation substrate formed on the encapsulation layer and including a display area and a non-display area adjacent to the display area, wherein, the encapsulation substrate is for supporting the display area and the non-display area such that there is no base substrate in the display apparatus.

Abstract: A flexible display is disclosed. The flexible display including an oxide semiconductor thin film transistor on a plastic substrate includes a first buffer layer disposed on the plastic substrate, a second buffer layer disposed on the first buffer layer and formed of silicon oxide (SiOx), and an active layer disposed on the second buffer layer and formed of an oxide semiconductor. The first buffer layer includes a lower layer directly contacting the plastic substrate and formed of silicon nitride (SiNx) and an upper layer disposed on the lower layer and formed of silicon oxide (SiOx).

Abstract: Disclosed is a flexible display device that may include a flexible substrate; a display device layer provided on a first surface of the flexible substrate; and a deformation-preventing portion provided on a second surface of the flexible substrate, the second surface corresponding to the opposite surface to the first surface provided with the display device layer, wherein the display device layer includes a first area and a second area, and the deformation-preventing portion is overlapped with the second area.

Abstract: A flexible display is disclosed. The flexible display including an oxide semiconductor thin film transistor on a plastic substrate includes a first buffer layer disposed on the plastic substrate, a second buffer layer disposed on the first buffer layer and formed of silicon oxide (SiOx), and an active layer disposed on the second buffer layer and formed of an oxide semiconductor. The first buffer layer includes a lower layer directly contacting the plastic substrate and formed of silicon nitride (SiNx) and an upper layer disposed on the lower layer and formed of silicon oxide (SiOx).

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

Abstract: There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

Abstract: A flexible display device is disclosed. The flexible display device may include a flexible substrate, a display device layer on a first surface of the flexible substrate, a receiving groove in a second surface of the flexible substrate, and a deformation-preventing layer in the receiving groove on the second surface of the flexible substrate.

Abstract: Disclosed is a flexible display device that may include a flexible substrate; a display device layer provided on a first surface of the flexible substrate; and a deformation-preventing portion provided on a second surface of the flexible substrate, the second surface corresponding to the opposite surface to the first surface provided with the display device layer, wherein the display device layer includes a first area and a second area, and the deformation-preventing portion is overlapped with the second area.

Abstract: There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

Abstract: There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

Abstract: There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

Abstract: There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

Abstract: There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).