Abstract: Disclosed is a method and device for filtering texture, using a patch shift. A patch-based texture filtering method for removing texture from an image comprises the steps of: distinguishing a structure edge from patches for each pixel of an input image; and performing a patch shift for the patches of each pixel, on the basis of structure edge information of each of the patches to select a representative patch of each pixel. Accordingly, the method can generate a result image in which texture has been automatically and completely removed from a piece of the input image.

Abstract: Disclosed is a method and device for filtering texture, using a patch shift. A patch-based texture filtering method for removing texture from an image comprises the steps of: distinguishing a structure edge from patches for each pixel of an input image; and performing a patch shift for the patches of each pixel, on the basis of structure edge information of each of the patches to select a representative patch of each pixel. Accordingly, the method can generate a result image in which texture has been automatically and completely removed from a piece of the input image.

Abstract: Method and apparatuses for correcting vignetting effects of an image are disclosed. A method for vignetting correction of an image according to an exemplary embodiment of the present disclosure may comprise receiving a two-dimensional image; calculating a radial bright channel representing intensity of the two-dimensional image; estimating a vignetting function of the two-dimensional image having similarity to the calculated radial bright channel; and correcting the vignetting effects of the two-dimensional image by using the estimated vignetting function. The vignetting correction methods and apparatuses according to the present disclosure can rapidly correct vignetting effects of an image by using a smaller memory, and correct vignetting effects of an arbitrary single image without being affected by a camera setting and camera lenses used for the image.

Abstract: Method and apparatuses for correcting vignetting effects of an image are disclosed. A method for vignetting correction of an image according to an exemplary embodiment of the present disclosure may comprise receiving a two-dimensional image; calculating a radial bright channel representing intensity of the two-dimensional image; estimating a vignetting function of the two-dimensional image having similarity to the calculated radial bright channel; and correcting the vignetting effects of the two-dimensional image by using the estimated vignetting function. The vignetting correction methods and apparatuses according to the present disclosure can rapidly correct vignetting effects of an image by using a smaller memory, and correct vignetting effects of an arbitrary single image without being affected by a camera setting and camera lenses used for the image.

Abstract: A method and apparatus for robust estimation of a non-uniform motion blur that may reduce an amount of the non-uniform motion blur information, that is, a number of homographies by estimating non-uniform motion blur information about a blur in a predetermined area, thereby reducing an amount of time needed to remove the non-uniform motion blur, and may improve accuracy and stability of the non-uniform motion blur information by estimating homographies for an input image while increasing a number of the homographies, iteratively.

Abstract: Provided is a method and apparatus for deblurring a non-uniform motion blur in an input image, that may restore a clearer image by dividing a large scale input image into tiles corresponding to partial areas, selecting, among the divided tiles, an optimal tile for a partial area most suitable for estimating non-uniform motion blur information, and effectively removing an artifact in an outer portion of a tile through padding of each tile.

Abstract: A method and apparatus for deblurring a non-uniform motion blur using a multi-frame including a blurred image and a noise image is provided. The apparatus may provide a clearer image by estimating non-uniform motion blur information of the blurred image using the multi-frame, and performing estimation of the non-uniform motion blur information and obtaining of a latent image iteratively, thereby improving accuracy for estimating the non-uniform motion blur information, and reducing a processing time.

Abstract: A method and apparatus for deblurring a non-uniform motion blur using a multi-frame including a blurred image and a noise image is provided. The apparatus may provide a clearer image by estimating non-uniform motion blur information of the blurred image using the multi-frame, and performing estimation of the non-uniform motion blur information and obtaining of a latent image iteratively, thereby improving accuracy for estimating the non-uniform motion blur information, and reducing a processing time.

Abstract: Provided is a method and apparatus for deblurring a non-uniform motion blur in an input image, that may restore a clearer image by dividing a large scale input image into tiles corresponding to partial areas, selecting, among the divided tiles, an optimal tile for a partial area most suitable for estimating non-uniform motion blur information, and effectively removing an artifact in an outer portion of a tile through padding of each tile.

Abstract: A method and apparatus for robust estimation of a non-uniform motion blur that may reduce an amount of the non-uniform motion blur information, that is, a number of homographies by estimating non-uniform motion blur information about a blur in a predetermined area, thereby reducing an amount of time needed to remove the non-uniform motion blur, and may improve accuracy and stability of the non-uniform motion blur information by estimating homographies for an input image while increasing a number of the homographies, iteratively.

Abstract: A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.

Abstract: An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.

Abstract: A method and apparatus for removing a non-uniform motion blur using a multi-frame may estimate non-uniform motion blur information using a multi-frame including a non-uniform motion blur, and may remove the non-uniform motion blur using the estimated non-uniform motion blur and the multi-frame. The apparatus may also obtain more accurate non-uniform motion blur information by iteratively performing the estimation of the non-uniform motion blur information, and the removal of the non-uniform motion blur.

Abstract: Methods of fabricating a semiconductor device are provided. The method includes forming a first gate stack and a second gate stack on a first region and a second region of a substrate, respectively. The method may further comprise forming first impurity regions self-aligned with the first gate stack and second impurity regions self-aligned with the second gate stack in the substrate of the first region and in the substrate of the second region, respectively. First impurity ions may be injected into the first and second impurity regions, forming a mask pattern covering the first region and exposing the second region on the substrate where the first impurity ions are injected and second impurity ions having an opposite conductivity type to the first impurity ions may be injected into the second impurity regions exposed by the mask pattern using a plasma doping process. The mask pattern may then be removed.

Abstract: A semiconductor device with a stable structure having high capacitance by changing the pillar type storage node structure and a method of manufacturing the same are provided. The method includes forming a sacrificial layer on a semiconductor substrate including a storage node contact plug, etching the sacrificial layer to form a region exposing the storage node contact plug, forming a first conductive material within an inner side of the region, burying a second conductive material within the region in which the first conductive material is formed, and removing the sacrificial layer to form a pillar type storage node.

Abstract: A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

Abstract: An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.

Abstract: A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

Abstract: A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conductive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

Abstract: A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.