Abstract: An electrode slurry transfer system, including: a mixer storage tank for storing an electrode slurry discharged from a mixer; a first transfer tank for storing a high temperature slurry and connected to the mixer storage tank by a first transfer pipe branched in parallel; a second transfer tank for storing a low temperature slurry and connected to the mixer storage tank by a first transfer pipe branched in parallel; a coater supply tank configured to receive a high temperature slurry and a low temperature slurry from the first and second transfer tanks, respectively, and to supply an electrode slurry mixture thereof to a coater; a flow rate regulating portion configured to regulate a transfer flow rate of a high temperature slurry introduced into the coater supply tank from the first transfer tank, and a transfer flow rate of a low temperature slurry introduced into the coater supply tank from the second transfer tank, respectively; and a control portion for controlling a temperature of the electrode slurry i

Abstract: Disclosed herein relates to an electrode for a lithium secondary battery including an insulating layer. The insulating layer is formed on a first insulating layer containing a first binder and on the first insulating layer, and includes a second insulating layer containing inorganic particles and a second binder, wherein the first binder is PVDF (Polyvinylidene fluoride), and the second binder is SBR (styrene butadiene rubber). Accordingly, the insulating layer of the present invention is excellent in wetness adhesion and electrical safety.

Abstract: A method of generating a layout and manufacturing a semiconductor device, including receiving a design layout of a semiconductor device including active fins; extracting a design rule of the active fins from the design layout; forming fin lines overlapping the active fins such that the fin lines have a length that is greater than a length of the active fins, wherein the fin lines continuously extend from a position adjacent to one edge of a layout region of the semiconductor device toward another edge, and are formed in an entirety of the layout region of the semiconductor device; forming a mandrel pattern layout in an entirety of the layout region of the semiconductor device, using the fin lines; and forming a cut pattern layout in the entirety of the layout region of the semiconductor device, using the active fins.

Abstract: A method of generating a layout and manufacturing a semiconductor device, including receiving a design layout of a semiconductor device including active fins; extracting a design rule of the active fins from the design layout; forming fin lines overlapping the active fins such that the fin lines have a length that is greater than a length of the active fins, wherein the fin lines continuously extend from a position adjacent to one edge of a layout region of the semiconductor device toward another edge, and are formed in an entirety of the layout region of the semiconductor device; forming a mandrel pattern layout in an entirety of the layout region of the semiconductor device, using the fin lines; and forming a cut pattern layout in the entirety of the layout region of the semiconductor device, using the active fins.

Abstract: A semiconductor device includes active fins on a substrate. Gate lines each extend in the second direction on the active fins. A contact plug is positioned on the active fins. A first via is in one of the first contact plugs. A first conductive line overlaps a first via. A first distance from a first active fin on which a first gate line of the gate lines is formed to an end of the first gate line is more than a predetermined distance. A second distance from a second active fin on which the first gate line is formed to the first active fin of the active fins is equal to or less than the predetermined distance. The second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs.

Abstract: A semiconductor device includes active fins on a substrate. Gate lines each extend in the second direction on the active fins. A contact plug is positioned on the active fins. A first via is in one of the first contact plugs. A first conductive line overlaps a first via. A first distance from a first active fin on which a first gate line of the gate lines is formed to an end of the first gate line is more than a predetermined distance. A second distance from a second active fin on which the first gate line is formed to the first active fin of the active fins is equal to or less than the predetermined distance. The second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs.

Abstract: Disclosed is a dental implant, in which a fixture and an abutment are together by a separate screw post so as to prevent a breakage of an implant screw tightening part and uniformly transmit forces over the entirety of a contact surface, to prevent stresses from being partially concentrated, and in which the screw-tightening direction between the fixture and the abutment is variable so as to improve the coupling force between them and fundamentally prevent a screw from becoming loosened. The dental implant includes a fixture and abutment, an abutment including a lower abutment to be fitted onto the fixture, and an upper abutment connected to an upper portion of the lower abutment, the lower abutment and the upper abutment being separate from each other. The upper abutment and the fixture are coupled and fixed by the screw post.