Patents by Inventor Hojun KWON

Hojun KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor of semiconductor device and method of fabricating the same
    Patent number: 9159729
    Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: October 13, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyongsoo Kim, Jin-Su Lee, Hojun Kwon, Dongkyun Park, Jiseung Lee, Young-Seok Choi
  • CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20140120683
    Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.
    Type: Application
    Filed: September 17, 2013
    Publication date: May 1, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyongsoo KIM, Jin-Su LEE, Hojun KWON, Dongkyun PARK, Jiseung LEE, Young-Seok CHOI