Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer disposed between the first electrode and the second electrode and including an emission layer; wherein the interlayer further includes: a layer A including an oxide of an inorganic compound; a layer B adjacent to an upper portion of the layer A and including an oxide of an inorganic compound; and a layer C adjacent to a lower portion of the layer A and including an oxide of an inorganic compound, and relationships between a refractive index a of the layer A, a refractive index b of the layer B, and a refractive index c of the layer C satisfy the Equations (1) and (2) defined herein.

Abstract: An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode, wherein, the organic layer further includes an emission region, and a first region disposed between the first electrode and the emission region, and a second region disposed between the emission region and the second electrode, the second region includes a first layer and a second layer, each including an organic compound, the emission region includes a first compound, a second compound, a third compound, and a fourth compound, the first compound includes a hole transporting host compound, the second compound includes an electron transporting host compound or a bipolar host compound, the third compound includes a thermally active delayed fluorescence compound or an organometallic complex, satisfying Equation 1 as described herein.

Abstract: An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes an emission layer and a buffer layer between the emission layer and the second electrode, the buffer layer directly contacts the emission layer and includes a first compound and a quinolinolato-based metal complex, and the first compound is a compound including at least one electron transporting moiety.

Abstract: A solar cell can include a single crystalline semiconductor substrate; an emitter region positioned on an incident surface of the substrate, forming a p-n junction with the single crystalline semiconductor substrate; a first passivation layer positioned on a rear surface of the substrate and made of an oxide material; a back surface field layer positioned on the first passivation layer and forming a hetero junction with the single crystalline semiconductor substrate; a first electrode electrically connected to the emitter region; and a second electrode electrically connected to the single crystalline semiconductor substrate

Abstract: A solar cell is discussed. The solar cell includes a silicon substrate; a front passivation layer positioned on a front surface of the silicon substrate; an n-doped layer positioned on the front surface of the silicon substrate; an anti-reflection layer positioned on the n-doped layer; a p-doped region positioned on a rear surface of the silicon substrate; an n-doped region positioned on the rear surface of the silicon substrate and spaced apart from the p-doped region; a rear passivation layer positioned on the rear surface of the silicon substrate, the rear passivation layer including: a first portion positioned between the p-doped region and the silicon substrate; a second portion positioned between the n-doped region and the silicon substrate, the second portion being space apart from the first potion; and a third portion disposed between the first portion and the second portion; a first electrode directly contacted to the p-doped region; and a second electrode directly contacted to the n-doped region.

Abstract: A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate; an anti-reflection layer on the first passivation layer; a second passivation layer on a second surface of the substrate; an emitter region on the second passivation layer, the emitter region forming a p-n junction and a hetero-junction junction with the substrate; a second field region on the second passivation layer, the second field region forming a hetero-junction with the substrate; a first electrode contacted to the emitter region; a second electrode contacted to the second field region; a spacing between the emitter region and the second field region; and a third passivation layer on the second surface of the substrate at the spacing.

Abstract: A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.

Abstract: A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

Abstract: A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.

Abstract: A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate that contains first impurities of a first conductive type and is formed of a crystalline semiconductor, a first field region that is positioned on an incident surface of the substrate and contains second impurities of a second conductive type, an emitter region that contains third impurities of a third conductive type, is formed of a non-crystalline semiconductor, and is positioned on a non-incident surface of the substrate opposite the incident surface of the substrate, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.

Abstract: A solar cell is discussed. The solar cell includes a substrate having a first conductivity type and made of a crystalline semiconductor; an emitter region having a second conductivity type opposite the first conductivity type, and forming a p-n junction with the substrate; a surface field region having the first conductivity type and being separated from the emitter region; a first electrode connected to the emitter region; and a second electrode connected to the surface field region, wherein at least one of the emitter region and the surface field region includes a plurality of semiconductor portions, and at least one of the plurality of semiconductor portion is a crystalline semiconductor portion.

Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

Abstract: A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

Abstract: A solar cell is discussed. The solar cell includes a substrate made of a crystalline semiconductor, an emitter region made of a non-crystalline semiconductor forming a p-n junction with the substrate, a first passivation region positioned on the substrate and made of an oxide material, a first electrode electrically connected to the emitter region, and a second electrode electrically connected to the substrate.

Abstract: A solar cell includes a crystalline semiconductor substrate containing a first impurity of a first conductive type, a first non-crystalline impurity semiconductor region directly contacting with the crystalline semiconductor substrate to form a p-n junction with the crystalline semiconductor substrate and including a first portion in which a second impurity of a second conductive type is doped with a first impurity doping concentration and a second portion in which the second impurity is doped with a second impurity doping concentration, the first impurity doping concentration being less than an impurity doping concentration of the crystalline semiconductor substrate and the second impurity doping concentration being greater than the impurity doping concentration of the crystalline semiconductor substrate, a first electrode connected to the first non-crystalline impurity semiconductor region, and a second electrode connected to the crystalline semiconductor substrate.

Abstract: A solar cell is discussed. The solar cell includes a substrate having a first conductivity type and made of a crystalline semiconductor; an emitter region having a second conductivity type opposite the first conductivity type, and forming a p-n junction with the substrate; a surface field region having the first conductivity type and being separated from the emitter region; a first electrode connected to the emitter region; and a second electrode connected to the surface field region, wherein at least one of the emitter region and the surface field region includes a plurality of semiconductor portions, and at least one of the plurality of semiconductor portion is a crystalline semiconductor portion.

Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

Abstract: A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.