Patents by Inventor Hok-Kin Choi

Hok-Kin Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7867687
    Abstract: Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: January 11, 2011
    Assignee: Intel Corporation
    Inventors: Wang Yueh, Huey-Chiang Liou, Hai Deng, Hok-Kin Choi
  • Patent number: 7622305
    Abstract: Embodiments of techniques for determining the concentrations of one or more acid components of a multiple acid solution are presented herein.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: November 24, 2009
    Assignee: Intel Corporation
    Inventors: Hok-Kin Choi, Vani Thirumala, Yongmei Wu
  • Publication number: 20080241401
    Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include an electroless plating process, that may comprise an electroless plating bath, wherein the electroless plating bath comprises a stabilizer and a suppressor, separating the stabilizer and the suppressor by using a HPLC, determining the concentration of a UV/VIS detectable one of the stabilizer and the suppressor by using a UV/VIS, and determining the concentration of an ELSD detectable one of the suppressor and the stabilizer by using an ELSD.
    Type: Application
    Filed: March 28, 2007
    Publication date: October 2, 2008
    Inventors: Hok-kin Choi, Yong-mei Wu, Vani Thirumaia
  • Patent number: 7412872
    Abstract: The present description relates to a process for measuring outgas emissions in fabrication chambers used for semiconductors, micromachines and the like. In one embodiment, the invention includes inserting a gas adsorption material into a processing chamber exhaust vent, running a process in the chamber, venting gasses in the chamber through the gas adsorption material, removing the adsorption material from the exhaust vent, and analyzing the adsorption material for gases.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: August 19, 2008
    Assignee: Intel Corporation
    Inventors: Hok-Kin Choi, Vani Thirumala
  • Publication number: 20080179184
    Abstract: Methods of chemical analysis are disclosed. In one aspect, a method may include introducing a sample into a chromatograph. The sample may include a multiple analytes having diverse sizes and chemical properties. The analytes may be present in solution with a salt. The salt may have a concentration that is higher than that of each of the analytes. The analytes and the salt may be separated with the chromatograph. The separated analytes may be introduced into an evaporative light scattering detector (ELSD). The amounts of each of the analytes in the sample may be determined with the ELSD. Other methods, including methods of analyzing plating solutions and adjusting the plating solutions based on the analysis are also disclosed, as are systems to perform such analysis and systems to adjust the concentrations of plating solutions.
    Type: Application
    Filed: January 25, 2007
    Publication date: July 31, 2008
    Inventors: Hok-Kin Choi, Yongmei Wu, Vani Thirumala
  • Patent number: 7391501
    Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.
    Type: Grant
    Filed: January 22, 2004
    Date of Patent: June 24, 2008
    Assignee: Intel Corporation
    Inventors: Hai Deng, Yueh Wang, Huey-Chiang Liou, Hok-Kin Choi, Robert M. Meagley, Ernisse Putna
  • Patent number: 7375030
    Abstract: Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: May 20, 2008
    Assignee: Intel Corporation
    Inventors: Hok-Kin Choi, Robert P. Meagley
  • Publication number: 20080063564
    Abstract: Embodiments of techniques for determining the concentrations of one or more acid components of a multiple acid solution are presented herein.
    Type: Application
    Filed: August 25, 2006
    Publication date: March 13, 2008
    Inventors: Hok-Kin Choi, Vani Thirumala, Yongmei Wu
  • Patent number: 7316893
    Abstract: Modular containment cell arrangements, including modular containment cells to contain an item and at least one processing material associated with processing of the item.
    Type: Grant
    Filed: November 18, 2002
    Date of Patent: January 8, 2008
    Assignee: Intel Corporation
    Inventors: Eric M. Panning, Hok-kin Choi
  • Publication number: 20060234495
    Abstract: Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.
    Type: Application
    Filed: May 25, 2006
    Publication date: October 19, 2006
    Inventors: Hok-Kin Choi, Robert Meagley
  • Publication number: 20060223202
    Abstract: The present description relates to measuring outgas emissions in fabrication chambers used for semiconductors, micromachines and the like. In one embodiment, the invention includes inserting a gas adsorption material into a processing chamber exhaust vent, running a process in the chamber, venting gasses in the chamber through the gas adsorption material, removing the adsorption material from the exhaust vent, and analyzing the adsorption material for gases.
    Type: Application
    Filed: March 31, 2005
    Publication date: October 5, 2006
    Inventors: Hok-Kin Choi, Vani Thirumala
  • Patent number: 7089785
    Abstract: Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.
    Type: Grant
    Filed: December 30, 2003
    Date of Patent: August 15, 2006
    Assignee: Intel Corporation
    Inventors: Hok-Kin Choi, Robert P. Meagley
  • Patent number: 7087104
    Abstract: A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electroless deposition solution containing the entire group. In one embodiment of the invention, the metal ion includes a cobalt ion, the complexing agent includes citric acid, the ammonium salt includes ammonium chloride, and the strong base includes tetramethylammonium hydroxide.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: August 8, 2006
    Assignee: Intel Corporation
    Inventors: Hok-Kin Choi, Vani Thirumala, Valery Dubin, Chin-chang Cheng, Ting Zhong
  • Publication number: 20050164502
    Abstract: Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.
    Type: Application
    Filed: January 22, 2004
    Publication date: July 28, 2005
    Inventors: Hai Deng, Yueh Wang, Huey-Chiang Liou, Hok-Kin Choi, Robert Meagley, Ernisse Putna
  • Publication number: 20050138992
    Abstract: Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.
    Type: Application
    Filed: December 30, 2003
    Publication date: June 30, 2005
    Inventors: Hok-Kin Choi, Robert Meagley
  • Publication number: 20050084793
    Abstract: Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.
    Type: Application
    Filed: October 15, 2003
    Publication date: April 21, 2005
    Inventors: Wang Yueh, Huey-Chiang Liou, Hai Deng, Hok-Kin Choi
  • Patent number: 6864192
    Abstract: A Langmuir-Blodgett film may be utilized as a chemically amplified photoresist layer. Langmuir-Blodgett films have highly vertically oriented structures which may be effective in reducing line edge or line width roughness in chemically amplified photoresists.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: March 8, 2005
    Assignee: Intel Corporation
    Inventors: Huey-Chiang Liou, Hai Deng, Wang Yueh, Hok-Kin Choi
  • Publication number: 20040266014
    Abstract: An embodiment of the present invention includes a technique to remove a contaminant from a resist. A resist having a resist volume is spun in a centrifuige tube of a centrifuge at a pre-defined spinning rate corresponding to the resist volume in a time period to provide a gel. The gel is located under a lighting condition. The resist is decanted from the centrifuge tube.
    Type: Application
    Filed: June 30, 2003
    Publication date: December 30, 2004
    Inventors: Hok-Kin Choi, Hai Deng
  • Publication number: 20040265501
    Abstract: A system and method for storing a solution containing a subset of a group consisting of a metal ion, a complexing agent, an ammonium salt, and a strong base and then nearer to a time of use in an electroless deposition process, using the solution to form an electroless deposition solution containing the entire group. In one embodiment of the invention, the metal ion includes a cobalt ion, the complexing agent includes citric acid, the ammonium salt includes ammonium chloride, and the strong base includes tetramethylammonium hydroxide.
    Type: Application
    Filed: June 26, 2003
    Publication date: December 30, 2004
    Applicant: Intel Corporation
    Inventors: Hok-Kin Choi, Vani Thirumala, Valery Bubin, Chin-Chang Cheng, Ting Zhong
  • Publication number: 20040106048
    Abstract: Modular containment cell arrangements, including modular containment cells to contain an item and at least one processing material associated with processing of the item.
    Type: Application
    Filed: November 18, 2002
    Publication date: June 3, 2004
    Inventors: Eric M. Panning, Hok-Kin Choi