Patents by Inventor Hok Min Ho
Hok Min Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7939915Abstract: A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer.Type: GrantFiled: October 13, 2009Date of Patent: May 10, 2011Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Hok Min Ho, Ching Tien Ma, Woei Ji Song
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Publication number: 20100029090Abstract: A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer.Type: ApplicationFiled: October 13, 2009Publication date: February 4, 2010Applicants: SHENZHEN BAK BATTERY CO., LTD., Semiconductor Manufacturing International (Shanghai) CorporationInventors: Hok Min Ho, Ching Tien Ma, Woei Ji Song
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Patent number: 7629673Abstract: A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer.Type: GrantFiled: December 15, 2006Date of Patent: December 8, 2009Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Hok Min Ho, Ching Tien Ma, Woei Ji Song
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Publication number: 20090294875Abstract: A Metal Oxide Semiconductor device includes a semiconductor substrate; a gate electrode formed on the surface of the substrate, having an offset spacer on each side; source/drain electrodes in the substrate having lightly doped regions respectively; metal silicide located on the gate electrode and the source/drain electrodes; and first impurity ions and second impurity ions in the lightly doped regions. A method for manufacturing a Metal Oxide Semiconductor device includes forming a gate electrode on a semiconductor substrate; implanting first impurity ions and second impurity ions to form lightly doped regions; depositing a dielectric layer and etching the dielectric layer to form offset spacers; implanting the first impurity ions to form the source/drain electrodes; forming metal silicide on the surfaces of the gate electrode and the source/drain regions. This invention can effectively prevent metal nickel diffusion into the lightly doped regions.Type: ApplicationFiled: August 5, 2009Publication date: December 3, 2009Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (shanghai) CORPORATIONInventors: Haohua Ye, Hok Min Ho, Yu Li
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Publication number: 20080128869Abstract: A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer.Type: ApplicationFiled: December 15, 2006Publication date: June 5, 2008Applicant: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Hok Min Ho, Ching Tien Ma, Woei Ji Song
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Publication number: 20080079095Abstract: A Metal Oxide Semiconductor device includes a semiconductor substrate; a gate electrode formed on the surface of the substrate, having an offset spacer on each side; source/drain electrodes in the substrate having lightly doped regions respectively; metal silicide located on the gate electrode and the source/drain electrodes; and first impurity ions and second impurity ions in the lightly doped regions. A method for manufacturing a Metal Oxide Semiconductor device includes forming a gate electrode on a semiconductor substrate; implanting first impurity ions and second impurity ions to form lightly doped regions; depositing a dielectric layer and etching the dielectric layer to form offset spacers; implanting the first impurity ions to form the source/drain electrodes; forming metal silicide on the surfaces of the gate electrode and the source/drain regions. This invention can effectively prevent metal nickel diffusion into the lightly doped regions.Type: ApplicationFiled: September 24, 2007Publication date: April 3, 2008Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (Shanghai) CORPORATIONInventors: Haohua YE, Hok Min HO, Yu Ll