Abstract: A glass shaping method capable of grinding and/or polishing a fine brittle material more stably than conventional methods is provided. The glass shaping method of the present invention comprises: a mold forming step of shaping a surface of a base material having a higher melting temperature than a glass softening point to form a mold 10; a glass molding step of sealing softened glass into a groove 15 formed in a surface of the mold 10 by the forming step to mold a glass substrate 17; a glass processing step of cutting, grinding and/or polishing the glass substrate 17, with the mold 10 being fixed, to form a glass shaped article 1; and a step of eliminating only the base material 16 of the mold 10 after the glass processing step to remove the glass shaped article 1 from the mold.

Abstract: A method of producing display panels of collectively producing a plurality of display panels each including a contour line of an outer shape, at least a section of which is curved includes a bonding process of forming a bonded substrate by bonding a pair of substrates including a plurality of thin film patterns formed on at least one substrate, a stacking process of stacking a plurality of bonded substrates and pinching and holding the plurality of stacked bonded substrates in a stacking direction using a jig, and a grinding process of collectively forming end surfaces of the plurality of display panels forming the curved contour line by collectively grinding the pair of substrates located outside the thin film pattern among stacked bonded substrates along the outer shape in a state in which the plurality of stacked bonded substrate are pinched by the jig.

Abstract: A method of producing display panels of collectively producing a plurality of display panels each including a contour line of an outer shape, at least a section of which is curved includes a bonding process of forming a bonded substrate by bonding a pair of substrates including a plurality of thin film patterns formed on at least one substrate, a stacking process of stacking a plurality of bonded substrates and pinching and holding the plurality of stacked bonded substrates in a stacking direction using a jig, and a grinding process of collectively forming end surfaces of the plurality of display panels forming the curved contour line by collectively grinding the pair of substrates located outside the thin film pattern among stacked bonded substrates along the outer shape in a state in which the plurality of stacked bonded substrate are pinched by the jig.

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract: To prevent occurrence of distortion in a semiconductor cooling device and to prevent a semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.

Abstract: A substrate having many via contact means disposed therein. Each of the via contact means is composed of a via hole, as a through-hole, formed in the substrate, a metal film disposed on the inner peripheral surface of the via hole, and a solder filled into the cavity defined by the metal film.

Abstract: A substrate having many via contact means disposed therein. Each of the via contact means is composed of a via hole, as a through-hole, formed in the substrate, a metal film disposed on the inner peripheral surface of the via hole, and a solder filled into the cavity defined by the metal film.

Abstract: To prevent occurrence of distortion in semiconductor cooling device and to prevent the semiconductor chip from being separated away from the semiconductor cooling device in case the semiconductor chip and the semiconductor cooling device are thermally expanded, a semiconductor cooling device includes at least an upper plate, an intermediate plate and a lower plate, and has a coolant inlet portion, an outlet portion and a flow passage portion. The upper plate and the lower plate are composite plates constituted by plating copper maintaining a thickness of not smaller than 0.05 mm on one surface or on both surfaces of auxiliary plates made of a material having a tensile strength of not smaller than 1000 N/mm2, a heat conductivity of not smaller than 100 W/m·K and a coefficient of thermal expansion of not larger than 6.0 ppm/° C.