Abstract: A fuel cell system includes a fuel cell with an anode chamber and a cathode chamber. The fuel cell system also includes a recirculation device that recirculates anode exhaust gas to the anode input, which includes a discharge line for discharging liquid and/or gas from the region of the recirculation device, and an air conveying device for supplying the cathode chamber with a supply air flow. A water separator, which is connected to the discharge line and through which at least a portion of the supply air flow passes, is situated between the air conveying device and the cathode chamber in the area of the supply air flow.

Abstract: A fuel cell system includes a fuel cell with an anode chamber and a cathode chamber. The fuel cell system also includes a recirculation device that recirculates anode exhaust gas to the anode input, which includes a discharge line for discharging liquid and/or gas from the region of the recirculation device, and an air conveying device for supplying the cathode chamber with a supply air flow. A water separator, which is connected to the discharge line and through which at least a portion of the supply air flow passes, is situated between the air conveying device and the cathode chamber in the area of the supply air flow.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

Abstract: A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrincing semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.