Abstract: A device for loading at least one substrate into a process chamber of a coating unit and unloading the at least one substrate therefrom by means of a gripper of a handling machine. The device includes a loading plate which can be gripped by the gripper and embodies a storage place for each at least one substrate, the storage place being formed by an edge of an opening that is assigned to each substrate. The device also includes a substrate holder that is provided with a pedestal-type substrate support which is adapted to the loading plate and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

Abstract: An apparatus for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The height of the process chamber is variable before the beginning of the deposition process and/or during the deposition process, which height is defined by the distance between the substrate bearing surface and the gas exit surface.

Abstract: What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.

Abstract: A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.

Abstract: A device for loading at least one substrate into a process chamber of a coating unit and unloading the at least one substrate therefrom by means of a gripper of a handling machine. The device includes a loading plate which can be gripped by the gripper and embodies a storage place for each at least one substrate, the storage place being formed by an edge of an opening that is assigned to each substrate. The device also includes a substrate holder that is provided with a pedestal-type substrate support which is adapted to the loading plate and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Abstract: What is described here is a method and a temperature management and reaction chamber system for the production of nitrogenous semiconductor crystal materials of the form AXBYCZNVMW, wherein A, B, C represent elements of group II or III, N represents nitrogen, M represents an element of group V or VI, and X, Y, Z, V, W represent the mol fraction of each element in this compound, operating on the basis of gas phase compositions and gas phase successions. The invention excels itself by the provisions that for the production of the semiconductor crystal materials the production process is controlled by the precise temperature control of defined positions in the reaction chamber system under predetermined conditions.

Abstract: The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.

Abstract: The invention relates to a device for loading at least one substrate (1) into a process chamber of a coating unit and unloading the at least one substrate (1) therefrom by means of a gripper (2) of a handling machine. The inventive device comprises a loading plate (3) which can be gripped by the gripper (2) and embodies a storage place for each at least one substrate (1), said storage place being formed by an edge (4) of an opening (5) that is assigned to each substrate (1). The inventive device also comprises a substrate holder (7) that is provided with a pedestal-type substrate support which is adapted to the loading plate (3) and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

Abstract: The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

Abstract: The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Abstract: The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

Abstract: Disclosed is device for depositing at least one precursor, on at least one substrate, said precursor being present in the liquid or dissolved form. The inventive device comprises at least one storage container for the individual or mixed precursor/s and a reaction chamber in which the substrate/s is/are arranged, the layers being placed on said substrates. The inventive device also comprises a conveying device that conveys the precursor/s from the storage container/s to the area by means of at least one line, whereby the precursor/s are vaporized in said area. Said device further comprises a control unit which controls the conveying device. The invention is characterized in that a sensor unit is provided which detects the amount of the supplied precursors and has an output signal that is applied to the control unit as a real signal. The control unit controls the conveying device in such a way that the mass flow pertaining to the precursors has a mean predetermined value during a given time period.

Abstract: A reactor for coating flat substrates and particularly wafers is described which has a reaction vessel into which reaction gases can be introduced, and a substrate holder unit in which substrates are held in a holder such that the main surface of the substrates to be coated is oriented downward during the deposition operation and is aligned essentially in parallel to the flow direction of the reaction gases. The invention is characterized in that at least two spaces for substrates are provided on the substrate holder unit and in that the holder or holders is/are constructed in the manner of a template which has openings for the surfaces of the substrates to be coated.

Abstract: A CVD reactor comprising: a reactor casing with a casing cover, a heated susceptor for one wafer or several wafers, which is disposed in the reactor casing, a fluid inlet unit including a plurality of openings facing said wafer or wafers through which the CVD media, which is moderately heated, enter the reactor, and a fluid outlet disposed on the periphery of the reactor casing, through which the introduced media is discharged; wherein the fluid outlet has roughly the shape of a disk with a plurality of outlet openings for the discharge of CVD media, and is disposed between the susceptor and the reactor cover in such a way that the fluid outlet is heated by the susceptor by radiation and hence adjusts itself to a temperature between the temperature of the susceptor and the reactor cover through which the CVD media enter in a moderately heated state.

Abstract: A reactor for coating flat substrates and particularly wafers is described which has a reaction vessel into which reaction gases can be introduced, and a substrate holder unit in which substrates are held in a holder such that the main surface of the substrates to be coated is oriented downward during the deposition operation and is aligned essentially in parallel to the flow direction of the reaction gases. The invention is characterized in that at least two spaces for substrates are provided on the substrate holder unit and in that the holder or holders is/are constructed in the manner of a template which has openings for the surfaces of the substrates to be coated.