Abstract: The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.

Abstract: Provided is a method of forming ferromagnetic sputter targets and sputter target assemblies having a uniform distribution of magnetic leakage flux. The method includes providing a ferromagnetic sputter workpiece and hot rolling the workpiece to a substantially circular configuration sputter target; machining a taper in a surface of the sputter target to have a thickness gradient of the sputter target, where the center of the sputter target is about 0.020 to about 0.005 inches thinner than the edge of the sputter target, and where the magnetic leakage flux across the sputter target is uniformly distributed.

Abstract: A method for solder bonding a sputter target to a backing plate having a plurality of spaced-apart ridges on its bonding surface to provide a uniform spacing and a uniform solder bonded interface; and the sputter target/backing plate assembly so produced.

Abstract: Provided is a method of manufacturing sputter target assemblies, and the products thereof. The method includes manufacturing a backing plate, the backing plate having a planar top surface and a cylindrical recess therein. Then a near final shape target insert having a frusta-conical rear surface that corresponds to the cylindrical recess of the backing plate and a front surface is manufactured. The target insert has a yield strength greater than that of the backing plate, and a height greater than the depth of the cylindrical recess in the backing plate. Thereafter, the target insert is hot pressed into the cylindrical recess of the backing plate to a state of plastic deformation so as to diffusion bond the target insert to the backing plate and form the target assembly. The target insert protrudes above the planar front surface of the backing plate.

Abstract: The method is used to fabricate pure copper sputter targets. It includes first heating a copper billet to a temperature of at least 500° C. The copper billet has a purity of at least 99.99 percent. Then warm working the copper billet applies at least 40 percent strain. Cold rolling the warm worked copper billet then applies at least 40 percent strain and forms a copper plate. Finally, annealing the copper plate at a temperature above about 250° C. forms a target blank. The target blank has equiaxed grains having an average grain size of less than 40 &mgr;m. The grains of the target blank have (111), (200), (220) and (311) orientations with the amount of the grains having each of the orientations being less than 50 percent.

Abstract: The method is used to fabricate pure copper sputter targets. It includes first heating a copper billet to a temperature of at least 500° C. The copper billet has a purity of at least 99.99 percent. Then warm working the copper billet applies at least 40 percent strain. Cold rolling the warm worked copper billet then applies at least 40 percent strain and forms a copper plate. Finally, annealing the copper plate at a temperature above about 250° C. forms a target blank. The target blank has equiaxed grains having an average grain size of less than 40 &mgr;m. The grains of the target blank have (111), (200), (220) and (311) orientations with the amount of the grains having each of the orientations being less than 50 percent.

Abstract: The present invention provides a high purity cobalt sputter target having a single phase h.c.p. structure and a magnetic permeability less than the intrinsic magnetic permeability of the material. Substantially pure cobalt is cast and slowly cooled, such as at a rate of 15° C./min. Or less, to form a cast target of single phase h.c.p. crystallographic structure. This cast target is hot worked at a temperature of at least about 1000° C. to impart a strain of about 65% or greater into the cobalt material, followed by a slow, controlled cooling to room temperature, such as at a rate of 15° C./min. or less, to maintain the single phase h.c.p. crystallographic structure. The cooled target is then cold worked at substantially room temperature to impart a strain of about 5-20%. The sputter target of the present invention processed by this method has a magnetic permeability of less than about 9, grain sizes in the size range of about 70-160 &mgr;m, and average grain size of about 130 &mgr;m.