Abstract: An item selected by a user from a stock of items is visually identified by an apparatus. A recognition system recognizes the item, determines a proper subset of correspondingly recognized items of the stock, based on at least one recognition feature of the item and generates recognition information representative of the subset. A display receives the recognition information and visually displays the subset in a first display mode. A first set of non-recognized items of the stock is also visually displayed in a second display mode. The first and second display modes are visually distinguishable. User input is received to identify the item from the visualized items. A processor conducts for further automatic processing of identification information representative of the item.

Abstract: A weighing scale (30a, 30b, 40, 50) is designed for use in a first and a second configuration. In the first configuration, a base unit (1) has a main plane disposed horizontally with a load receiver (32, 42, 52) extending parallel thereto. A weighing cell (2) is mounted under the load receiver in the base unit and measures a weighing force acting perpendicular to the main plane. In the second configuration, the main plane is disposed vertically, with the load receiver hanging below the base unit as a suspended weighing pan, with the weighing cell mounted in the base unit to measure a vertical weighting force that is parallel to the main plane of the base unit.

Abstract: A weighing scale (30a, 30b, 40, 50) is designed for use in a first and a second configuration. In the first configuration, a base unit (1) has a main plane disposed horizontally with a load receiver (32, 42, 52) extending parallel thereto. A weighing cell (2) is mounted under the load receiver in the base unit and measures a weighing force acting perpendicular to the main plane. In the second configuration, the main plane is disposed vertically, with the load receiver hanging below the base unit as a suspended weighing pan, with the weighing cell mounted in the base unit to measure a vertical weighting force that is parallel to the main plane of the base unit.

Abstract: The invention pertains to a device for use in connection with the sale of merchandise in a store or for use in a warehouse, with a unit which can be operated to generate merchandise-specific signals and a display unit which can be operated to display visually the merchandise-specific data represented by the merchandise-specific signals, where a driver circuit, which can be operated to receive signals representing images of at least part of the store or warehouse and to drive the display unit to display visually the images represented by these signals is assigned to the display unit.

Abstract: Substantially sulfur free thermoplastic PMMA containing molding compositions are utilized with non-ferrous metal tools for the manufacture of molded articles. The use of such molding materials having a sulfur content of less than 50 ppm reduces the wear on the non-ferrous metal tools, particularly when utilized with injection molding and pressure molding. As a result of the use of sulfur free molding masses where it necessary to utilize tools of non-ferrous metal, there is a substantial economic advantage in the use thereof.

Abstract: A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10.degree. C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150.degree. to 280.degree. C. The finished lift-off mask is dimensionally stable at temperatures of .ltoreq.280.degree. C. and does not emit liquid or volatile components when heated.During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160.degree. to 250.degree. C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining.

Abstract: An optical photolithographic process in which resist lines having widths in the micron and sub-micron range are produced without the use of a fine line photomask. A positive photoresist having an additive for image reversal is applied to the surface of a semiconductor substrate. The photoresist is exposed through a photomask to ultraviolet light. The edges of the opaque sections of the mask diffract the ultraviolet light, forming partially exposed areas between the exposed and unexposed areas formed in the photoresist. After development in a solvent to remove the exposed areas, the photoresist undergoes an image reversal process. The photoresist is first baked at 100.degree. C. for 30 minutes. During this bake step, the photoactive decomposition products present in the partially exposed areas react, freezing the solubility of the partially exposed areas with respect to that of the unexposed areas.

Abstract: On the layer 12 a mask 3 corresponding to the desired pattern of holes 15 is provided with via openings 14 having overhanging walls. The layer 12 is selectively etched with a method where the etching attack takes place vertically to the layer surface, and wherein the mask 3 is thinned simultaneously, so that holes 15 are obtained having a cross-section increasing toward the mask 3. If subsequently material 16 for filling the holes 15 is applied in a blanket deposition these holes are completely filled when the material 16 has the same thickness as the layer 12 although the openings over the holes are decreasing with increasing thickness of the material 16. The layer 12 consists preferably of an insulation material, the mask 3 of positive photoresist, and the material 16 of a metal.

Abstract: In practice, the development time for a photoresist covered semiconductor wafer exposed by a given mask configuration is established experimentally. It is obvious that this time is only adequate if the other parameters do not change. According to the subject invention the mask is provided with an optical grid. The grid pattern, together with the pattern of the integrated circuit, is transferred by exposure to the photoresist layer covering the semiconductor wafer. During the development process, a light ray is directed onto the area of the wafer which was exposed to the grid pattern and the intensity of the light diffracted in the direction of the 2nd diffraction order is monitored by a light sensor. The slits of the grid may have the same width as the smallest lines of the exposed pattern. In this case, the intensity minimum of the 2nd diffraction order indicates the end of the development process.

Abstract: The invention relates to a method of making a negative photoresist image on a substrate, where a normally positive working photoresist material containing 1-hydroxyethyl-2-alkyl-imidazoline is applied to a substrate, image-wise exposed with actinic radiation, heated, and blanket exposed to actinic radiation. The material which was not exposed originally is then removed with a solvent to give a negative image.