Abstract: The present invention relates to the preparation of perfluorinated or partially fluorinated peroxides which avoids the use of carbonyl fluoride (COF2).

Abstract: The present invention is directed to methods for the preparation of (CnF2n+1)O-substituted arenes and heteroarenes and the direct perfluoralkoxy lation of arenes and heteroarenes with a (CnF2n+1)O-group, respectively. characterized in that a peroxide reagent according to the general formula (I): (CnF2n+1)2 (I) is fragmented in the presence of an electron transferring catalyst under (CnF2n+1)O-radical formation, and said (CnF2n+1)O-radical then substitutes a C—H bond of an arene or heteroarene C—H bond with a (CnF2n+1)O-group, wherein in the above formulae, n is an integer in the range from 1 to 4.

Abstract: The invention concerns methods for dielectrically insulating electrical active parts using certain fluorinated nitroalkanes, as well as compositions and apparatus comprising such compounds.

Abstract: Methods for dielectrically insulating electrical active parts The invention concerns methods for dielectrically insulating electrical active parts using certain fluorinated cyano-substituted ethers as well as compositions and apparatus comprising such compounds.

Abstract: A method for dielectrically insulating active electric parts A method for dielectrically insulating an active electric part wherein the electrical active part is arranged in a gas-tight housing comprising an insulating gas which contains or consists of a compound of formula (i) Rf1-(O)x-Rf2 wherein Rf1 and Rf2 are identical or different and designated fluorocarbon residues having a H/F ratio of equal to or less than 0.5 and x is 1, 2, or 3.

Abstract: A fluorine gas manufacturing plant wherein F2 is manufactured by the electrolysis of KF/HF compositions. The plant comprises skid modules for: HF storage, the electrolytic cells, storage and purification of the manufactured F2 raw gas, for fluorine gas delivery including a single buffer tank or multiple storage units, scrubbers to provide purified waste gas, for providing cooling water circuits, analysis, electrical rectifiers, an electrical sub-station with transformers and emergency supply, and for utilities including a control room with laboratory and a rest room for the personnel. The advantage of the skids is that they can be separately manufactured in workshops, tested, transported to the facility and assembled there. A great advantage is the safety aspect, a reliable F2 production for 24 hours and 7 days a week of high purity F2.

Abstract: Elemental fluorine is used as etching agent for the manufacture of electronic devices, especially semiconductor devices, micro-electromechanical devices, thin film transistors, flat panel displays and solar panels, and as chamber cleaning agent mainly for plasma-enhanced chemical vapor deposition (PECVD) apparatus. For this purpose, fluorine often is produced on-site. The invention provides a process for the manufacture of electronic devices wherein fluorine is produced on site and is purified from HF by a low temperature treatment. A pressure of between 1.5 and 20 Bars absolute is especially advantageous.

Abstract: An apparatus for producing a fluorine gas, comprising at least one fluorine generating cell, and at least one fluorine generating cell detector for detecting components of products obtained by the fluorine generating cell, wherein at least one of the fluorine generating cells is connected with the fluorine generating cell detector.