Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: A monolithic semiconductor chip defines a plurality of subarrays of optical detector regions, wherein each subarray of optical detector regions includes a corresponding plurality of optical detector regions and wherein each subarray of optical detector regions has the same relative spatial arrangement of optical detector regions as each of the other subarrays of optical detector regions.

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: An apparatus for determining a colour of a translucent material. The apparatus comprises a first light source configured to illuminate a translucent material at a first surface location, a second light source configured to illuminate the translucent material at a second surface location spaced apart from said first surface location, and a light spectral sensor configured to detect light at said first surface location. The apparatus is configured to operate the first and second light sources alternately, and such that light detected by the light spectral sensor originating from said first source is principally light diffusely reflected from said first surface location, whilst light detected by the detector originating from said second source is principally light scattered by scattering centres in the interior of the translucent material.

Abstract: A photodiode (201) is positioned so as to detect a beam of light reflected from the surface of a spinning DVD. In response to the detection of incident light, the photodiode (201) generates a signal, which is input to a trans-impedance amplifier (203). The output of the trans-impedance amplifier (203) is input to a voltage amplifier (204), to generate an output signal for processing. The trans-impedance amplifier (203) is provided with a feedback arrangement comprising a resister (205) in parallel with a capacitor (206) and a diode (207), in this case embodied by a transistor (such as an MOS transistor) arranged to act as a diode. At an input voltage wherein the corresponding output voltage is equal to the maximum normal operating voltage, diode (207) begins to conduct and capacitor (206) becomes operative. As a result, the feedback conditions change, reducing the effective gain of the trans-impedance amplifier (203).

Abstract: A DVD reading apparatus has a plurality of photodiodes 201 operable to detect light of a specific wavelength reflected from the surface of a DVD. Each photodiode 201 is connected between a positive supply rail and a current mirror arrangement comprising transistors 204, 205, 207 and amplifier 202. The current mirror arrangement is operative to receive an input at the collector of transistor 204 and to generate two outputs identical to the input, a first output at the collector of transistor 205 and a second output at the collector of transistor 207. The first output is connected to an amplification arrangement 206 the output of which is passed to a processing means (not shown) along with the outputs of the amplification arrangements of each other photodiode 201. The second output of each current mirror arrangement, the collector of transistor 207 is output to a common multi-input summing amplifier 209 via an individual buffer arrangement.

Abstract: The invention relates to an optical fiber receiver (11) for optoelectronic integrated circuits (OEIC's) having an improved sensitivity and improved bandwidth. The improvements are achieved by subdividing the photodiodes into partial photodiodes (D1, D2), whereby each partial photodiode is connected to a respective transimpedance amplifier (20, 21), and the output signals of the individual transimpedance amplifiers are added inside a summation amplifier (30). The optical fiber received can be produced using different technologies: CMOS, BICMOS, BIPOLAR.

Abstract: The invention relates to an optical fiber receiver (11) for optoelectronic integrated circuits (OEIC's) having an improved sensitivity and improved bandwidth. The improvements are achieved by subdividing the photodiodes into partial photodiodes (D1, D2), whereby each partial photodiode is connected to a respective transimpedance amplifier (20, 21), and the output signals of the individual transimpedance amplifiers are added inside a summation amplifier (30). The optical fiber received can be produced using different technologies: CMOS, BICMOS, BIPOLAR.