Abstract: A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterall

Abstract: A complementary BiCMOS semiconductor device comprises a substrate of a first conductivity type and a number of active regions which are provided therein and which are delimited in the lateral direction by shallow field insulation regions, in which vertical npn-bipolar transistors with an epitaxial base are arranged in a first subnumber of the active regions and vertical pnp-bipolar transistors with an epitaxial base are arranged in a second subnumber of the active regions, wherein either one transistor type or both transistor types have both a collector region and also a collector contact region in one and the same respective active region. To improve the high-frequency properties exclusively in a first transistor type in which the conductivity type of the substrate is identical to that of the collector region, an insulation doping region is provided between the collector region and the substrate.

Abstract: A bipolar transistor has a base with an epitaxial base layer and a raised base connection region which in a lateral direction in parallel relationship with the substrate surface encloses the emitter which is surrounded by a spacer of insulating material. The epitaxial base layer is raised in a heightwise direction perpendicularly to the substrate surface. An emitter of a T-shaped cross-sectional profile is separated laterally from the outer base portion by a spacer of insulating material. Its vertical bar of the T-shape adjoins with its lower end the inner base portion.

Abstract: The invention relates to a BiCMOS device comprising a substrate having a first type of conductivity and a number of active regions that are provided therein and are delimited in a lateral direction by flat field-insulating regions. Vertical npn bipolar epitaxial base transistors are disposed in a first partial number of the active regions while vertical pnp bipolar epitaxial base transistors are arranged in a second partial number of the active regions of the BiCMOS device. One transistor type or both transistor types are provided with both a collector region and a collector contact region in one and the same respective active region. In order to improve the high frequency characteristics, an insulation doping region that is configured so as to electrically insulate the collector and the substrate is provided between the collector region and the substrate exclusively in a first transistor type in which the type of conductivity of the substrate corresponds to that of the collector region.

Abstract: A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterall

Abstract: The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.

Abstract: A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low ‘on’ resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the low doped drain region LDDR (22, 26) of the transistor is a doping zone (24) which is shallow in comparison with the penetration depth of the source/drain region (3, 5), of inverted conductivity type to the LDDR (22, 26) (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR (22, 26) and does not exceed a nett doping of 8E12 At/cm2.