Abstract: Methods of sealing a venthole of a micromechanical device. The venthole leads to a chamber that contains a device. A first laser pulse is applied to the venthole of a substrate of the micromechanical device for a first time period. The first laser pulse has a first laser intensity spatial distribution. Thereafter, a second laser pulse is applied to the venthole for a second time period. The second laser pulse has a second laser intensity spatial distribution that is different than the first laser intensity spatial distribution. The second laser pulse can be applied for a time that is different than that of the first laser pulse.

Abstract: A venthole of a micromechanical device is sealed with laser irradiation. A micromechanical device has a substrate, such as silicon. The substrate has an upper surface, and defines a venthole leading to a chamber that contains a device, and a trench extending downward from the upper surface and located offset from the venthole. A laser pulse is applied to the substrate at or within the trench. This causes a portion of the substrate located below the upper surface to melt and travel laterally to close off and seal the venthole laterally from beneath the upper surface.

Abstract: A micromechanical system which includes a movably suspended mass. The micromechanical system includes a damping system, the damping system including a movably suspended damping structure, the damping structure being deflectable by applying a voltage. The damping structure is designed in such a way that a frequency response and/or a damping of the movably suspended mass are/is changeable with the aid of a deflection of the damping structure.

Abstract: A venthole of a micromechanical device is sealed with laser irradiation. A micromechanical device has a substrate, such as silicon. The substrate has an upper surface, and defines a venthole leading to a chamber that contains a device, and a trench extending downward from the upper surface and located offset from the venthole. A laser pulse is applied to the substrate at or within the trench. This causes a portion of the substrate located below the upper surface to melt and travel laterally to close off and seal the venthole laterally from beneath the upper surface.

Abstract: A method for controlling surface asperity during laser sealing of a membrane vent hole. The method includes applying a laser pulse having a laser intensity spatial distribution to the membrane vent hole to form a seal over the membrane vent hole. The seal has a seal surface. The laser pulse includes a primary laser pulse region and a secondary laser pulse region beginning once the primary laser pulse region ends. The primary laser pulse region has a primary laser power, and the secondary laser pulse region has a secondary laser power. The secondary laser power is less than the primary laser power. The seal surface has a controlled surface asperity characteristic.

Abstract: An inertial measurement device for controlling surface asperity during laser sealing. The device includes a membrane having an upper surface and defining a vent hole extending downward from the upper surface. The vent hole has a first height and a first perimeter along the first height. The vent hole has a second height and a second perimeter extending along the second height. The first height is disposed above the second height. The first perimeter is greater than the second perimeter to form a shoulder portion therebetween. The shoulder portion, the first perimeter, and the first height collectively create a volume configured to control surface asperity during laser sealing of the vent hole.

Abstract: A method for controlling surface asperity during laser sealing of a membrane vent hole. The method includes applying a laser having a laser intensity spatial distribution to the membrane vent hole to form a seal over the membrane vent hole. The seal has a seal surface. The laser pulse includes a primary laser pulse region and a secondary pulse region later in time than the primary laser pulse region, and a time gap between the primary laser pulse region and the secondary laser pulse region. The primary laser pulse region and/or the secondary pulse region include first and second discontinuous laser pulses having a first time gap therebetween and/or third and fourth discontinuous laser pulses having a second time gap therebetween. The seal surface has a controlled surface asperity characteristic.

Abstract: A micromechanical device that includes a silicon substrate with an overlying oxide layer and with a micromechanical functional layer lying above same, which extend in parallel to a main extension plane, a cavity being formed at least in the micromechanical functional layer and in the oxide layer. An access channel is formed in the oxide layer and/or in the micromechanical functional layer which, starting from the cavity, extends in parallel to the main extension plane and in the process extends in a projection direction, as viewed perpendicularly to the main extension plane, all the way into an access area outside the cavity. A method for manufacturing a micromechanical device is also described.

Abstract: A micromechanical system which includes a movably suspended mass. The micromechanical system includes a damping system, the damping system including a movably suspended damping structure, the damping structure being deflectable by applying a voltage. The damping structure is designed in such a way that a frequency response and/or a damping of the movably suspended mass are/is changeable with the aid of a deflection of the damping structure.

Abstract: A micromechanical device that includes a silicon substrate with an overlying oxide layer and with a micromechanical functional layer lying above same, which extend in parallel to a main extension plane, a cavity being formed at least in the micromechanical functional layer and in the oxide layer. An access channel is formed in the oxide layer and/or in the micromechanical functional layer which, starting from the cavity, extends in parallel to the main extension plane and in the process extends in a projection direction, as viewed perpendicularly to the main extension plane, all the way into an access area outside the cavity. A method for manufacturing a micromechanical device is also described.

Abstract: A sensor component and a method for manufacturing a sensor component, in which a sealing passivation of a sensor layer may be dispensed with. For this purpose, the sensor component includes, in particular, a thin film high-pressure sensor, a deformation body and a piezoresistive sensor layer, which is applied to the deformation body, the piezoresistive sensor layer including at least one metal as well as carbon and/or hydrocarbon and terminating the layer structure of the sensor component. Based on the materials used a sealing cover of the sensor layer by a thin film passivation layer may be dispensed with. Additional contact layers for contacting the sensor layer may advantageously also be dispensed with. Contacting may then take place directly on the sensor layer, using a bond wire.

Abstract: Method for applying a coating layer to a tubular intraluminal implant, in particular to a vascular support (stent), where the surface of the implant is perforated by a plurality of apertures, and where the coating layer is produced by deposition of material onto the surface of the implant. The implant is first pushed onto a cylindrical holder 4, a sacrificial material, in particular copper, is then deposited onto the surface of the implant until the deposited sacrificial material almost entirely fills the apertures, the coating layer is then deposited onto the surface of the implant provided with sacrificial material, and then the cylindrical holder 4 and the sacrificial material situated in the apertures 3 are removed.

Abstract: A process for producing a self-supporting layer made of a titanium and nickel alloy with superelastic and/or shape memory properties has the following steps: a substrate entirely or at least mainly made of silicon is provided, a layer of said alloy is applied to a surface of the substrate, the substrate with the desired form is cut out of a wafer or formed by a wafer with the desired form; at least some zones of the lateral surfaces of the substrate adjoining the zones of the surface of the substrate which receive the layer are subjected to an etching process; a layer of said alloy is applied to the surface of the substrate; and the substrate is removed from the applied layer. Also disclosed is a substrate suitable for carrying out the process and an object, in particular an implant, comprising at least one layer produced by this process.