Patents by Inventor Holger Schligtenhorst
Holger Schligtenhorst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100001322Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (12) comprising silicon which is provided with at least one semiconductor element (T), wherein an epitaxial semiconductor layer (1) comprising silicon is grown on top of a first semiconductor substrate (14), wherein a splitting region (2) is formed in the epitaxial layer (1), wherein a second substrate (11) is attached by wafer bonding to the first substrate (12) at the side of the epitaxial layer (1) provided with the splitting region (2) while an electrically insulating region (3) is interposed between the epitaxial layer (1) and the second substrate (11), the structure thus formed is split at the location of the splitting region (2) as a result of which the second substrate (11) forms the substrate (11) with on top of the insulating region (3) a part (IA) of the epitaxial layer forming the semiconductor body (12) in which the semiconductor element (T) is formed.Type: ApplicationFiled: October 5, 2006Publication date: January 7, 2010Applicant: NXP B.V.Inventors: Wolfgang Euen, Holger Schligtenhorst, Rainer Bauer, Marc Van Geffen, Karl-Heinz Kraft
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Patent number: 6930011Abstract: A semiconductor device includes a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the transistor is that the latter is provided with a Schottky clamping diode. The latter is formed in that case in that the connection conductor of the base region is also put into contact with the collector region. Here, the second connection conductor is exclusively connected to the base region, and a partial region of that portion of the base region which lies outside the emitter region, as seen in projection, lying below the second connection conductor is given a smaller flux of dopant atoms. The bipolar transistor is provided with a pn clamping diode which is formed between the partial region and the collector region.Type: GrantFiled: May 11, 2001Date of Patent: August 16, 2005Assignee: Koninklijke Philips Electronics N.V.Inventors: Godefridus A. M. Hurkx, Holger Schligtenhorst, Bernd Sievers
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Patent number: 6387769Abstract: A method of producing a Schottky varicap (25) including: (a) providing an epitaxial layer (12) on a semiconductor substrate (1); (b) providing an insulating layer including an oxide layer and a nitride layer on a predetermined area of the surface of the epitaxial layer (12); (c) depositing a polysilicon layer (6); (d) applying a first high temperature step to diffuse a guard ring (10) around the first predetermined area; (e) removing a predetermined portion of the polysilicon layer (6) to expose the first silicon nitride film (5); (f) implanting atoms through at least the first oxide film (4) to provide a predetermined varicap doping profile; (g) applying a second high temperature step to anneal and activate the varicap doping profile; (h) removing the first oxide film (4) to provide an exposed area; (i) providing a Schottky electrode (17) on the exposed area.Type: GrantFiled: March 1, 2001Date of Patent: May 14, 2002Assignee: U.S. Philips CorporationInventors: Ronald Dekker, Henricus Godefridus Rafael Maas, Anco Heringa, Holger Schligtenhorst
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Patent number: 6355971Abstract: In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accordance with the invention, this first region (1) includes three distinct zones, namely a low-doped zone (23), a high-doped zone (25), and an intermediate additional zone (24). The low-doped zone (23) is provided by a semiconductor body portion (11) having a substantially uniform p-type doping concentration (P−) and forms the p-n junction (12) with the second region (2). The distinct additional zone (24) is present between the low-doped zone (23) and the high-doped zone (25). The high-doped zone (25) which may form a contact zone has a doping concentration (P++) which is higher than that of the low-doped zone (23) and which decreases towards the low-doped zone (23).Type: GrantFiled: February 25, 1999Date of Patent: March 12, 2002Assignee: U.S. Philips CorporationInventors: Holger Schligtenhorst, Godefridus A. M. Hurkx, Andrew M. Warwick
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Publication number: 20020024113Abstract: The invention relates to a semiconductor device comprising a preferably discrete bipolar transistor with a collector region (1), a base region (2), and an emitter region (3) which are provided with connection conductors (6, 7, 8). A known means of preventing a saturation of the transistor is that the latter is provided with a Schottky clamping diode. The latter is formed in that case in that the connection conductor (7) of the base region (2) is also put into contact with the collector region (1).Type: ApplicationFiled: May 11, 2001Publication date: February 28, 2002Applicant: U.S. PHILIPS CORPORATIONInventors: Godefridus A.M. Hurkx, Holger Schligtenhorst, Bernd Sievers
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Publication number: 20010054747Abstract: In a semiconductor switch device such as an NPN transistor (T) or a power switching diode (D), a multiple-zone first region (1) of one conductivity type forms a switchable p-n junction (12) with a second region (2) of opposite conductivity type. In accordance with the invention, this first region (1) includes three distinct zones, namely a low-doped zone (23), a high-doped zone (25), and an intermediate additional zone (24). The low-doped zone (23) is provided by a semiconductor body portion (11) having a substantially uniform p-type doping concentration (P−) and forms the p-n junction (12) with the second region (2). The distinct additional zone (24) is present between the low-doped zone (23) and the high-doped zone (25). The high-doped zone (25) which may form a contact zone has a doping concentration (P++) which is higher than that of the low-doped zone (23) and which decreases towards the low-doped zone (23).Type: ApplicationFiled: February 25, 1999Publication date: December 27, 2001Inventors: HOLGER SCHLIGTENHORST, GODEFRIDUS A.M. HURKX, ANDREW M. WARWICK
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Patent number: 6320223Abstract: A trench gate field effect device has a semiconductor body (2) with a trench (3) extending into a first major surface (2a) so as to define a regular array of polygonal source cells (4). Each source cell contains a source region (5a,5b) and a body region (6a,6b) with the body regions separating the source regions from a common further region (20). A gate (G) extends within and along said trench (3) for controlling a conduction channel through each of the body regions. Each source cell (4) has a central semiconductor region (60) which is more highly doped than said body regions, is of opposite conductivity type to the further region and forms a diode with the further region. Each source cell (4) has an inner trench boundary (3a) and an outer polygonal trench boundary (3b) with the inner trench boundary bounding a central subsidiary cell (10a) containing the central semiconductor region (60).Type: GrantFiled: March 17, 2000Date of Patent: November 20, 2001Assignee: U.S. Philips CorporationInventors: Raymond J. E. Hueting, Adam R. Brown, Holger Schligtenhorst, Mark Gajda, Stephen W. Hodgskiss
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Publication number: 20010031538Abstract: A method of producing a Schottky varicap (25) including:Type: ApplicationFiled: March 1, 2001Publication date: October 18, 2001Inventors: Ronald Dekker, Henricus Godefridus Rafael Maas, Anco Heringa, Holger Schligtenhorst
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Patent number: 6252282Abstract: The invention relates to a semiconductor device including a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the transistor is that the latter is provided with a Schottky clamping diode. The latter is formed in that case in that the connection conductor of the base region is also put into contact with the collector region. In a device according to the invention, the second connection conductor is exclusively connected to the base region, and a partial region of that portion of the base region which lies outside the emitter region, as seen in projection, lying below the second connection conductor is given a smaller flux of dopant atoms. The bipolar transistor in a device according to the invention is provided with a pn clamping diode which is formed between the partial region and the collector region.Type: GrantFiled: February 9, 1999Date of Patent: June 26, 2001Assignee: U.S. Philips CorporationInventors: Godefridus A. M. Hurkx, Holger Schligtenhorst, Bernd Sievers