Abstract: A power semiconductor device includes, an active area that conducts load current between first and second load terminal structures, a drift region, and a backside region that includes, inside the active area, first and second backside emitter zones one or both of which includes: first sectors having at least one first region of a second conductivity type contacting the second load terminal structure and a smallest lateral extension of at most 50 ?m; and/or second sectors having a second region of the second conductivity type contacting the second load terminal structure and a smallest lateral extension of at least 50 ?m. The emitter zones differ by at least of: the presence of first and/or second sectors; smallest lateral extension of first and/or second sectors; lateral distance between neighboring first and/or second sectors; smallest lateral extension of the first regions; lateral distance between neighboring first regions within the same first sector.

Abstract: A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the first surface; an n-doped drift region between the anode region and the second surface; an n-doped cathode contact region adjoining the second surface; a p-doped injection region adjoining the second surface and the cathode contact region; and a p-doped auxiliary region between the drift region and the cathode contact region. The auxiliary region includes first and second sub-regions. In a top view, the first sub-region covers at least part of the injection region and the second sub-region covers at least part of the cathode contact region. In the top view, the auxiliary region includes a plurality of openings covering from 0.1% to an 20% of a surface area of the active diode area at the second surface.

Abstract: An injection-molded first component of an article, the first component including a sheath element formed from a pre-sheath element, the sheath element having a cavity and a recess extending from the cavity into a wall of the sheath element surrounding the cavity. The recess is formed by a through hole in the pre-sheath element and a lid element closing the through hole. The lid element is connected to the pre-sheath element with a plastic material injection-molded over at least a part of a parting line between the lid element and the pre-sheath element.

Abstract: A method of making a cleaning element carrier for a toothbrush comprises: providing at least two pluralities of loose filaments of a predefined length and different from one another in at least one of filament material, filament diameter, filament cross-section, filament shape, presence or absence of additives, presence or absence of a coating, and any combination thereof; providing a hole-perforation plate having a front surface, a back surface, a thickness therebetween, and a plurality of holes shaped and arranged according to a predetermined pattern; picking filaments from the pluralities of loose filaments; providing an energy source; arranging a plurality of bristle tufts in a fusing position in the hole-perforation plate so that ends of the bristle tufts are disposed at different distances from the energy source, wherein the distances are adjustable according to the at least one property, wherein the plurality of bristle tufts includes bristle tufts comprising an inner portion bristle tufts comprising a

Abstract: A cleaning element carrier for a toothbrush in a form of a disk has a back surface including a central depression covering at least 70% of the back surface and forming an edge at the border. The carrier's front surface includes at least one protrusion so that the front surface comprises two levels, wherein the area covered by the depression is larger than the area covered by the protrusion.

Abstract: A method for producing a toothbrush head, comprising: providing at least two filament containers, each comprising a supply of loose filaments that differ in at least one of their property selected from material, diameter, cross-section, shape, and presence of additives and/or coating; picking bristle tufts from the containers and arranging them in a perforation plate comprising holes shaped and distributed according to a desired bristle field of the brush head to be produced; arranging an energy source and the ends of the tufts in a contactless arrangement, wherein the ends of the tufts to be fused are at different distances from the energy source, and wherein the distance is adjusted according to the at least one property; applying energy to the ends of the tufts until fuse balls are formed thereon; transferring the tufts to a molding position, wherein a distance between at least one fuse ball and the front surface is different from the distance between the bottom edge of said fuse ball and the front surface

Abstract: A vacuum-insulated line (200) has an inner and an outer corrugated hose (101, 102) which are separated from one another by an evacuated intermediate space (103). One of the corrugated hoses is encased with a wound hose (201). The wound hose (201) prevents the line (200) from becoming elongated when it is charged with pressure during the transport of a medium. The wound hose (201) furthermore protects the line against external mechanical loads or damage. The wound hose simultaneously protects the corrugated hoses against excessive bending.

Abstract: A plug-in coupling for connecting a first to a second double-walled, vacuum-insulated cryogenic line includes a coupling plug and a coupling socket. The coupling plug has an inner and an outer pipe piece and a first connecting flange and is connected to the first cryogenic line. The coupling socket has an inner and an outer pipe piece and a second connecting flange and is connected to the second cryogenic line. In an assembled state of the plug-in coupling, the coupling plug has been plugged into an open annular gap in the coupling socket. The annular gap is surrounded both at its inner circumference and at its outer circumference by an insulating vacuum, whereby the thermal insulation of the plug-in coupling is improved. This construction makes possible a shorter design of the plug-in coupling, which, while achieving good thermal insulation, is space-saving and easy to handle.

Abstract: A method for manufacturing a toothbrush head or a part thereof comprises steps of providing a plurality of bristle tufts; providing a hole perforation plate comprising a front surface, a back surface, a thickness therebetween, and a plurality of holes grouped into a plurality of hole arrangements, wherein the front surface is uneven in an area of the hole arrangement; pushing the bristle tufts through the holes; and fusing ends of the bristle tufts at the back surface of the plate by application of thermal energy, thereby forming a plurality of fuse balls that are larger than the holes of the plate; and mounting the plate with the plurality of bristle tufts into a brush head.

Abstract: A hole perforation plate has a front surface, a back surface, a thickness therebetween, and a plurality of holes, grouped into more than one arrangement of holes, wherein the more than one arrangement of holes can be identical or different compared to one another regarding the number of the holes, the shape of the holes, the size of the holes, the distance between the holes, the arrangement of the holes, and a combination thereof.

Abstract: A hole perforation plate (60) has a front surface (61), a back surface (62), a thickness (D) therebetween, and a plurality of holes (70), grouped into more than one arrangement (65) of holes (70), wherein the more than one arrangement (65) of holes (70) can be identical or different compared to one another regarding the number of the holes (70), the shape of the holes (70), the size of the holes (70), the distance between the holes (70), the arrangement of the holes (70), and a combination thereof, and wherein the front surface (61) is uneven in the area of the arrangement (65) of the holes (70).

Abstract: A plug-in coupling has a coupling plug and a coupling socket. The coupling plug has an inner and an outer pipe piece and a first attachment flange and is connected to the first cryogenic line. The coupling socket has an inner and an outer pipe piece and a second attachment flange and is connected to the second cryogenic line. A circular annular seal on the distal end of the coupling plug is of electrically insulating form. An insulating sleeve is arranged on the outer pipe piece of the coupling plug. An insulating disc is situated between the first and the second attachment flange when the coupling plug has been inserted into the coupling socket. The plug-in coupling realizes a galvanic is separation between the coupling plug and the coupling socket.

Abstract: A method of producing a power semiconductor device includes: providing a semiconductor body; forming, at the semiconductor body, a polycrystalline semiconductor region; forming, at the polycrystalline semiconductor region, an amorphous sublayer; subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and forming a metal layer at the re-crystallized sublayer.

Abstract: A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type adjacent the first region at the second surface; a field stop region of the first conductivity type between the drift region and second surface; and a first electrode on the second surface directly adjacent to the first region in a first part of the second surface and to the second region in a second part of the second surface. The field stop region includes first and second sub-regions. Over a predominant portion of the first part of the second surface, the second sub-region directly adjoins the first region and includes dopants of the second conductivity type that partially compensate dopants of the first conductivity type.

Abstract: A plug-in coupling for connecting a first double-walled vacuum-insulated cryogenic line to a second. The plug-in coupling has a coupling plug and a coupling socket. The coupling plug can be plugged into the coupling socket, these being retained in a plugged-together state by fixing means. A guide column is arranged on the coupling plug or the coupling socket. The guide column has arranged on it elastic means which, in the assembled state of the plug-in coupling, are subjected to stressing and which subject the coupling plug and/or coupling socket to an elastic force which strives to release the coupling plug and coupling socket from one another as soon as the fixing means no longer hold the coupling plug and coupling socket together. The elastic energy stored in the elastic means ensures that, in the event of an emergency, the coupling plug and coupling socket are quickly released from one another.

Abstract: A power semiconductor device includes, an active area that conducts load current between first and second load terminal structures, a drift region, and a backside region that includes, inside the active area, first and second backside emitter zones one or both of which includes: first sectors having at least one first region of a second conductivity type contacting the second load terminal structure and a smallest lateral extension of at most 50 ?m; and/or second sectors having a second region of the second conductivity type contacting the second load terminal structure and a smallest lateral extension of at least 50 ?m. The emitter zones differ by at least of: the presence of first and/or second sectors; smallest lateral extension of first and/or second sectors; lateral distance between neighboring first and/or second sectors; smallest lateral extension of the first regions; lateral distance between neighboring first regions within the same first sector.

Abstract: A power semiconductor device includes: a semiconductor body; a first load terminal structure coupled to the body front side and a second load terminal structure coupled to the body backside; an active area for conducting a load current between the load terminal structures; a drift region having a first conductivity type; a backside region arranged at the backside and including, inside the active area, first and second backside emitter zones. At least one of the backside emitter zones includes: first sectors each having at least one first region of a second conductivity type, the first region arranged in contact with the second load terminal structure and having a smallest lateral extension of at most 50 ?m; and/or second sectors each having a second region of the second conductivity type arranged in contact with the second load terminal structure and having a smallest lateral extension of at least 50 ?m.

Abstract: A semiconductor substrate has a bond pad. The bond pad includes a layer of an aluminum alloy having a chemical composition including at least 0.3% by weight of at least one of Zn, Mg, Sc, Zr, Ti, Ag and/or Mn, with the balance being at least Al and incidental impurities.

Abstract: A coupling arrangement (100) for connecting thermally insulated, fluid-conducting lines (102, 104) has a coupling (101) comprising a first coupling part (106) and a second coupling part (108), and connecting means (110) for connecting the two coupling parts (106, 108). A covering (112) surrounding the coupling (101) is provided, which covering, on both sides of the coupling (101), in each case lies against the thermal insulation of the fluid-conducting lines (102, 104). A cavity (114) formed by the covering (112) is configured for thermal insulation between the coupling (101) and the exterior of the covering (112).

Abstract: A plug-in coupling for connecting a first to a second double-walled, vacuum-insulated cryogenic line is proposed. The plug-in coupling comprises a coupling plug and a coupling socket. The coupling plug has an inner and an outer pipe piece and a first connecting flange and is connected to the first cryogenic line. The coupling socket has an inner and an outer pipe piece and a second connecting flange and is connected to the second cryogenic line. In an assembled state of the plug-in coupling, the coupling plug has been plugged into an open annular gap in the coupling socket. The annular gap is surrounded both at its inner circumference and at its outer circumference by an insulating vacuum, whereby the thermal insulation of the plug-in coupling is improved. This construction makes possible a shorter design of the plug-in coupling, which, while achieving good thermal insulation, is space-saving and easy to handle.