Abstract: Disclosed herein is a catalyst for particulate combustion which is essentially free of platinum group metal compounds and the catalyst comprises a carrier and at least one metal oxide chosen from iron oxide and manganese oxide, and combinations thereof.

Abstract: Apparatus for inspecting a semiconductor wafer (8) has a plurality of light sensors (2) arranged relative to a light source (1) and wafer inspection platform (4), so that images of different angle views of a surface of the wafer can be received and compared with corresponding images taken of a reference wafer to automatically detect defects based on image comparison. The light sensors (2) may receive superposed images of light (7) reflected directly from the light source (1) off the wafer surface and light (6) indirectly reflected off the wafer surface after first reflecting off a dome (3) with a diffusely reflecting inner surface (5) positioned over the platform (4).

Abstract: Apparatus for inspecting a semiconductor wafer (8) has a plurality of light sensors (2) arranged relative to a light source (1) and wafer inspection platform (4), so that images of different angle views of a surface of the wafer can be received and compared with corresponding images taken of a reference wafer to automatically detect defects based on image comparison. The light sensors (2) may receive superposed images of light (7) reflected directly from the light source (1) off the wafer surface and light (6) indirectly reflected off the wafer surface after first reflecting off a dome (3) with a diffusely reflecting inner surface (5) positioned over the platform (4).

Abstract: A method of monitoring a light integrator of a photolithography system, wherein the photolithography system comprises a light source for illuminating different fields of a photosensitive layer and a light integrator for measuring the actual exposure doses of the illuminated fields, comprises the step of illuminating different fields of the photosensitive layer in succession. In each illumination step the actual exposure dose is measured by means of the light integrator, the actual exposure time (actualTime) is controlled so that the actual exposure dose to which a field of the photosensitive layer is exposed corresponds to a desired exposure dose, and the actual exposure time (actualTime) is fed to a monitoring system for in-line monitoring the light integrator during illumination of the fields.

Abstract: A method for in-line monitoring a lens controller of a photolithography system in which a plurality of wafers of a lot are processed in succession and which includes a lens for projecting a mask pattern on the wafers and a lens controller for correcting magnification of the lens includes the steps of printing a circuit pattern on each of the wafers of the lot by projecting a mask pattern on the wafers by means of a lens, determining a shot magnification value for a sample of the wafers, and continuously monitoring the variation of the shot magnification values, wherein a variation of the shot magnification values exceeding a first predetermined value indicates a failure of the lens controller.

Abstract: A method of monitoring a light integrator of a photolithography system, wherein the photolithography system comprises a light source for illuminating different fields of a photosensitive layer and a light integrator for measuring the actual exposure doses of the illuminated fields, comprises the step of illuminating different fields of the photosensitive layer in succession. In each illumination step the actual exposure dose is measured by means of the light integrator, the actual exposure time (actualTime) is controlled so that the actual exposure dose to which a field of the photosensitive layer is exposed corresponds to a desired exposure dose, and the actual exposure time (actualTime) is fed to a monitoring system for in-line monitoring the light integrator during illumination of the fields.