Patents by Inventor Holger Vogt
Holger Vogt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11322672Abstract: Described is an integrated vertical structure for infrared sensors, Peltier cooling, and thermoelectric generator applications consisting of a thermally insulating layer which is kept at a distance to a substrate by at least two spacers. In addition, the spacers have conductor structures which serve as thermoelectric elements. A method realizes manufacturing the integrated thermoelectric structure, a method realizes the operation of the integrated thermoelectric structure as a detector, a further method realizes the operation of the integrated thermoelectric structure as a thermoelectric generator, and a method realizes the operation of the integrated thermoelectric structure as a thermoelectric Peltier element.Type: GrantFiled: May 1, 2017Date of Patent: May 3, 2022Assignees: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Universitaet Duisburg-EssenInventors: Erik Verheyen, Tobias Kleinfeld, Dirk Weiler, Holger Vogt
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Publication number: 20170317260Abstract: Described is an integrated vertical structure for infrared sensors, Peltier cooling, and thermoelectric generator applications consisting of a thermally insulating layer which is kept at a distance to a substrate by at least two spacers. In addition, the spacers have conductor structures which serve as thermoelectric elements. A method realizes manufacturing the integrated thermoelectric structure, a method realizes the operation of the integrated thermoelectric structure as a detector, a further method realizes the operation of the integrated thermoelectric structure as a thermoelectric generator, and a method realizes the operation of the integrated thermoelectric structure as a thermoelectric Peltier element.Type: ApplicationFiled: May 1, 2017Publication date: November 2, 2017Inventors: Erik VERHEYEN, Tobias KLEINFELD, Dirk WEILER, Holger VOGT
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Publication number: 20170113928Abstract: What is described is a method for producing a device having providing a substrate having an electrode which is exposed at a main side of the substrate. In addition, the method has forming a micro or nanostructure which has a spacer which is based on the electrode, wherein forming has the steps of: depositing a sacrificial layer on the main side, wherein the sacrificial layer has amorphous silicon or silicon dioxide; patterning a hole and/or trench into the sacrificial layer by means of a DRIE process; coating the sacrificial layer by means of ALD or MOCVD so that material of the nano or microstructure forms at the hole and/or trench, and removing the sacrificial layer.Type: ApplicationFiled: January 6, 2017Publication date: April 27, 2017Inventors: Andreas GOEHLICH, Andreas JUPE, Holger VOGT
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Patent number: 9337177Abstract: Embodiments of the present invention provide a method for manufacturing an integrated sensor structure. In one step, a semiconductor substrate having integrated readout electronics and a metallization structure is provided, the metallization structure including tungsten and being exposed on a surface of the semiconductor substrate. In another step, a sensor layer is deposited onto the surface of the semiconductor substrate, the semiconductor substrate having the integrated readout electronics and the metallization structure being exposed, when depositing the sensor layer, to a temperature which is above a maximum temperature used when generating the integrated readout electronics such that the sensor layer is connected to the integrated readout electronics via the metallization structure.Type: GrantFiled: February 22, 2013Date of Patent: May 10, 2016Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.Inventors: Holger Vogt, Andreas Goehlich, Andreas Jupe
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Patent number: 9024401Abstract: The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.Type: GrantFiled: April 27, 2012Date of Patent: May 5, 2015Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.Inventors: Frank Hochschulz, Stefan Dreiner, Uwe Paschen, Holger Vogt
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Patent number: 8581357Abstract: A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.Type: GrantFiled: April 24, 2007Date of Patent: November 12, 2013Assignee: Fraunhofer-Gesellschft zur Foerderung der Angewandten Forschung e.V.Inventors: Holger Vogt, Jochen Bauer
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Patent number: 8569857Abstract: A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.Type: GrantFiled: December 9, 2010Date of Patent: October 29, 2013Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.Inventors: Piotr Kropelnicki, Marco Russ, Holger Vogt
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Publication number: 20130056733Abstract: A sensor includes a substrate, a membrane, first and second spacers arranged on the substrate, a first support structure which is supported, laterally next to the membrane, by the first spacer and contacts a first electrode of a first main side of the membrane which faces the substrate, and a second support structure which is supported, laterally next to the membrane, by the second spacer and contacts a second electrode on a second main side of the membrane which is opposite the first main side, so that the membrane is suspended via the first and second spacers and is electrically connected to contact areas of the substrate.Type: ApplicationFiled: August 24, 2012Publication date: March 7, 2013Inventors: Holger Vogt, Dirk Weiler, Piotr Kropelnicki
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Publication number: 20120273910Abstract: The finding that with a reasonable effort a layer thickness and/or refractive index variation may be acquired which realizes different internal optical path lengths for impinging radiation whereby fluctuation of spectral sensitivity of the photodetector is reduced is used to provide image sensors with a less fluctuating spectral sensitivity with respect to different wavelengths, or photodetectors with a small fluctuation of the spectral sensitivity from photodetector to photodetector with respect to defined wavelengths, with a reasonable effort.Type: ApplicationFiled: April 27, 2012Publication date: November 1, 2012Inventors: Frank Hochschulz, Stefan Dreiner, Uwe Paschen, Holger Vogt
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Patent number: 8080797Abstract: A bolometer includes a membrane, a first spacer and a second spacer, the membrane including resistive and contact layers. At a side facing a foundation, the contact layer has a first contact region at which the first spacer electrically contacts the contact layer, and a second contact region at which the second spacer electrically contacts the contact layer. In this manner, the membrane is kept at a predetermined distance to the foundation. The contact layer is laterally interrupted by a gap, so that the contact layer is subdivided at least into two parts, the first part including the first contact region, and the second part including the second contact region, and no direct connection existing within the contact layer from the first contact region to the second contact region, and the resistive layer being in contact with the first and second parts of the contact layer.Type: GrantFiled: September 8, 2006Date of Patent: December 20, 2011Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung e.v.Inventors: Holger Vogt, Marco Russ
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Patent number: 8026788Abstract: A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.Type: GrantFiled: December 9, 2005Date of Patent: September 27, 2011Assignees: Fraunhofer—Gesellschaft zur Foerderung der angewandten Forschung e.V., Universitaet Duisburg—Essen ForsthauswegInventors: Heinz Deiters, Susanne Linnenberg, Dirk Nachrodt, Uwe Paschen, Holger Vogt
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Publication number: 20110140224Abstract: A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.Type: ApplicationFiled: December 9, 2010Publication date: June 16, 2011Inventors: Piotr Kropelnicki, Marco Russ, Holger Vogt
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Patent number: 7683324Abstract: Bolometers utilize an organic semiconductor diode layer assembly for temperature measurement. These bolometers are particularly sensitive to the infrared wave range so that they are employable as infrared sensors and may be combined to form one-dimensional sensor rows or two-dimensional microbolometer arrays.Type: GrantFiled: March 14, 2006Date of Patent: March 23, 2010Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.v.Inventor: Holger Vogt
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Publication number: 20090321644Abstract: A bolometer includes a membrane, a first spacer and a second spacer, the membrane including resistive and contact layers. At a side facing a foundation, the contact layer has a first contact region at which the first spacer electrically contacts the contact layer, and a second contact region at which the second spacer electrically contacts the contact layer. In this manner, the membrane is kept at a predetermined distance to the foundation. The contact layer is laterally interrupted by a gap, so that the contact layer is subdivided at least into two parts, the first part including the first contact region, and the second part including the second contact region, and no direct connection existing within the contact layer from the first contact region to the second contact region, and the resistive layer being in contact with the first and second parts of the contact layer.Type: ApplicationFiled: September 8, 2006Publication date: December 31, 2009Inventors: Holger Vogt, Marco Russ
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Publication number: 20090206982Abstract: A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.Type: ApplicationFiled: December 9, 2005Publication date: August 20, 2009Applicant: UNIVERSITAET DUISBURG-ESSENInventors: Heinz Deiters, Susanne Linnenberg, Dirk Nachrodt, Uwe Paschen, Holger Vogt
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Publication number: 20090102003Abstract: A package including an electrical circuit may be produced in a more efficient manner when on a substrate including a plurality of electrical circuits the circuits are tested for their functionality and when the functional circuits are connected, by means of a frame enclosing the circuit on the surface of the substrate, to a second substrate whose surface area is smaller than that of the first substrate. The substrates are connected, by means of a second frame, which is adapted to the first frame and is located on the surface of the second substrate, such that the first and second frames lie one on top of the other. Subsequently, the functional packaged circuits may be singulated in a technologically simple manner.Type: ApplicationFiled: April 24, 2007Publication date: April 23, 2009Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.Inventors: Holger Vogt, Jochen Bauer
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Publication number: 20090084958Abstract: Bolometers utilize an organic semiconductor diode layer assembly for temperature measurement. These bolometers are particularly sensitive to the infrared wave range so that they are employable as infrared sensors and may be combined to form one-dimensional sensor rows or two-dimensional microbolometer arrays.Type: ApplicationFiled: March 14, 2006Publication date: April 2, 2009Inventor: Holger Vogt
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Patent number: 6693011Abstract: A power MOS element includes a drift region with a doping of a first doping type, a channel region with a doping of a second doping type which is complementary to said first doping type and which borders on said channel region and said drift region, and a source region with a doping of said first doping type, said source region bordering on said channel region. Furthermore, said power MOS element includes a plurality of basically parallel gate trenches which extend to said drift region and which comprise an electrically conductive material which is insulated from the transistor region by an insulator. The individual gate trenches are connected by a connecting gate trench, a gate contact only being connected in an electrically conductive way to the active gate trenches via contact holes in said connecting gate trench.Type: GrantFiled: August 21, 2002Date of Patent: February 17, 2004Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung e.V.Inventors: Uwe Wahl, Holger Vogt
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Publication number: 20030001215Abstract: A power MOS element includes a drift region with a doping of a first doping type, a channel region with a doping of a second doping type which is complementary to said first doping type and which borders on said channel region and said drift region, and a source region with a doping of said first doping type, said source region bordering on said channel region. Furthermore, said power MOS element includes a plurality of basically parallel gate trenches which extend to said drift region and which comprise an electrically conductive material which is insulated from the transistor region by an insulator. The individual gate trenches are connected by a connecting gate trench, a gate contact only being connected in an electrically conductive way to the active gate trenches via contact holes in said connecting gate trench.Type: ApplicationFiled: August 21, 2002Publication date: January 2, 2003Applicant: Fraunhofer-Gesellschaft zur Foerderung derangewandten Forschung e.V.Inventors: Uwe Wahl, Holger Vogt
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Patent number: 6460411Abstract: A flow sensor component consists of a diaphragm of monocrystalline silicon, the diaphragm having arranged therein filled slots which are filled with a thermally insulating material and which penetrate the diaphragm from a first main surface to a second main surface thereof. The filled slots defining at least one heating area of the diaphragm provided with at least one heating element and at least one detection area of the diaphragm provided with at least one temperature detection element, the filled slots thermally insulating the heating area and the detection area from one another and surrounding the heating area and the detection area completely.Type: GrantFiled: August 3, 1999Date of Patent: October 8, 2002Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.Inventors: Ralf Kersjes, Wilfried Mokwa, Günter Zimmer, Holger Vogt