Abstract: The present disclosure relates generally to polypeptides, which may be used of the treatment of neurological diseases or disorders.

Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.

Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.

Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.

Abstract: In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.

Abstract: A sensor arrangement is provided. The sensor arrangement may include at least one sensor element having a first side and a second side opposite the first side and configured for sensing a magnetic field; and an electrically conductive line, wherein a first portion of the electrically conductive line may be arranged on the first side of the at least one sensor element and a second portion of the electrically conductive line may be arranged on the second side of the at least one sensor element in such a way that if a current is flowing through the electrically conductive line, the current has a first direction in the first portion and a second direction opposite the first direction in the second portion, such that a first magnetic field formed by the current in the first portion and a second magnetic field formed by the current in the second portion may at least partly add constructively at a sensing portion of the at least one sensor element.

Abstract: A sensor arrangement is provided. The sensor arrangement may include at least one sensor element having a first side and a second side opposite the first side and configured for sensing a magnetic field; and an electrically conductive line, wherein a first portion of the electrically conductive line may be arranged on the first side of the at least one sensor element and a second portion of the electrically conductive line may be arranged on the second side of the at least one sensor element in such a way that if a current is flowing through the electrically conductive line, the current has a first direction in the first portion and a second direction opposite the first direction in the second portion, such that a first magnetic field formed by the current in the first portion and a second magnetic field formed by the current in the second portion may at least partly add constructively at a sensing portion of the at least one sensor element.

Abstract: An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

Abstract: A photodetector is formed in a semiconductor body. A hard mask grating is photolithographically formed on a surface of the semiconductor body. The semiconductor body is etched using the hard mask grating as a mask. The etching is performed down to a predetermined depth. An implantation is performed such that an anode or cathode of the photodetector that has been interrupted during the etching is re-formed.

Abstract: An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

Abstract: An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

Abstract: An integrated circuit arrangement (10) containing a pin photodiode (14) and a highly doped connection region (62) of a bipolar transistor (58) is explained, inter alia. Skillful control of the method produces an intermediate region (30) of the pin diode (14) with a large depth and without autodoping in a central region.

Abstract: A photodetector is formed in a semiconductor body. A hard mask grating is photolithographically formed on a surface of the semiconductor body. The semiconductor body is etched using the hard mask grating as a mask. The etching is performed down to a predetermined depth. An implantation is performed such that an anode or cathode of the photodector that has been interrupted during the etching is re-formed.