Abstract: A method includes transferring a tool monitoring device over a load port of a tool. A bottom of the tool monitoring device has a plurality of holes, and the load port comprises a plurality of pins at a top surface of the load port. The tool monitoring device is placed on the top surface of the load port. The pins at the top surface of the load port are plugged into the holes of the tool monitoring device. Heights of the pins are sensed to identifying a type of the load port after the tool monitoring device is placed on the top surface of the load port. An environment around the load port is monitored by using the tool monitoring device.

Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.

Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.

Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.

Abstract: An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

Abstract: A method for fault detection in a fabrication tool is provided. The method includes processing a semiconductor wafer in a fabrication tool according to a plurality of process events of a process run. The method further includes measuring humidity in the fabrication tool in at least one of the process events. The method also includes comparing the humidity measured in one of the process events with an expected humidity associated with the process event. In addition, the method includes based on the comparison, indicating an alarm condition when a difference between the measured humidity and the expected humidity exceeds a range of acceptable values associated with the process event.

Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.

Abstract: A method for fault detection in a fabrication tool is provided. The method includes processing a semiconductor wafer in a fabrication tool according to a plurality of process events of a process run. The method further includes measuring humidity in the fabrication tool in at least one of the process events. The method also includes comparing the humidity measured in one of the process events with an expected humidity associated with the process event. In addition, the method includes based on the comparison, indicating an alarm condition when a difference between the measured humidity and the expected humidity exceeds a range of acceptable values associated with the process event.

Abstract: An arc chamber filament for an ion implanter used to implant ions in a semiconductor wafer substrate during the fabrication of integrated circuits on the substrate. The filament includes a pair of parallel filament segments each of which is connected to a voltage source at one end. The parallel filament segments are connected to each other through a bidirectional winding configuration which defines at least one generally U-shaped winding unit on each side of a plane of symmetry bisecting the filament.

Abstract: A substrate holding mechanism which is particularly adaptable to automatically centering a semiconductor wafer on a platen spider as the wafer is lowered from a wafer loading and unloading position to a wafer processing position in a medium current implanter such as a Varian EHP500. Upon subsequent placement of a mechanical clamp on the wafer to hold the wafer on the platen, the clamp fingers of the clamp engage the edge of the wafer with substantially uniform pressure to prevent micro-cracking or fracturing of the wafer.

Abstract: An apparatus and a method for detecting the tilt angle of a wafer platform in a process machine, particularly in a medium density ion implanter. The apparatus and method can be used to accurately calibrate the zero-angle position of a wafer platform in the medium energy ion implanter. The apparatus includes a process chamber that has a cavity and a wafer platform therein, a window that is substantially transparent to laser energy mounted in a top wall of the chamber, and a laser emitter and receiver positioned outside the process chamber juxtaposed to the window for emitting a laser beam onto a wafer positioned on the wafer platform and receiving a reflected laser beam to determine a tilt angle of the wafer platform by the intensity of the reflected laser beam.

Abstract: An apparatus and a method for detecting the tilt angle of a wafer platform in a process machine, particularly in a medium density ion implanter. The apparatus and method can be used to accurately calibrate the zero-angle position of a wafer platform in the medium energy ion implanter. The apparatus includes a process chamber that has a cavity and a wafer platform therein, a window that is substantially transparent to laser energy mounted in a top wall of the chamber, and a laser emitter and receiver positioned outside the process chamber juxtaposed to the window for emitting a laser beam onto a wafer positioned on the wafer platform and receiving a reflected laser beam to determine a tilt angle of the wafer platform by the intensity of the reflected laser beam.

Abstract: A substrate holding mechanism which is particularly adaptable to automatically centering a semiconductor wafer on a platen spider as the wafer is lowered from a wafer loading and unloading position to a wafer processing position in a medium current implanter such as a Varian EHP500. Upon subsequent placement of a mechanical clamp on the wafer to hold the wafer on the platen, the clamp fingers of the clamp engage the edge of the wafer with substantially uniform pressure to prevent micro-cracking or fracturing of the wafer.